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MMBV2109LT1G

Onsemi

MMBV2109LT1G by Onsemi

MMBV2109LT1G by Onsemi is a varactor diode with a min quality factor of 200, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 33 pF and a max power dissipation of 0.225 W, making it ideal for RF tuning circuits in communication systems.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 39,760 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

39,760

-

$0.159

$0.132

$0.117

DigiKey

USA . 39,760 parts In-Stock

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$0.200

39,760

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$0.200

Verical

USA . 10,400 parts In-Stock

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$0.147

10,400

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$0.147

Distributors (In-Stock)

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Vyrian

USA . 2,128 parts In-Stock

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$0.115

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2,128

$0.115

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Digiode

USA . 2,486 parts In-Stock

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$0.124

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2,486

$0.124

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Bristol Electronics

USA . 2,804 parts In-Stock

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2,804

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Inventory MP

USA . 2,704 parts In-Stock

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2,704

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EPE Components Inc.

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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Corohmni

South Africa . 349 parts In-Stock

1+ parts

$0.115

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349

$0.115

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Corphita

USA . 2,019 parts In-Stock

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$0.117

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2,019

$0.117

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Component Stockers USA

USA . 30,885 parts In-Stock

1+ parts

$0.130

100+ parts

$0.120

1k+ parts

$0.110

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$0.110

30,885

$0.130

$0.120

$0.110

$0.110

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Continental Prestige Electronics

USA . 39,319 parts In-Stock

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$0.115

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39,319

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$0.115

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Problanco Electronics

Mexico . 8,217 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,934 parts In-Stock

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7,934

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SupplyDigital Components

Austria . 6,942 parts In-Stock

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TANS Electronics

Latvia . 6,113 parts In-Stock

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Kulean Microsystems

USA . 6,040 parts In-Stock

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6,040

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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UHIMA Technologies

Türkiye . 884 parts In-Stock

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884

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Overview

Discover the exceptional quality and performance of the MMBV2109LT1G Varactor Diode by Onsemi, a leading manufacturer known for its cutting-edge technology and innovation. Ideal for high frequency to ultra high frequency applications, this single-configured diode offers a minimum quality factor of 200 and a nominal capacitance of 33 pF. With a maximum power dissipation of 0.225 W and a breakdown voltage of 30 V, this diode provides unmatched reliability and efficiency. Experience the value and benefits this product brings to your projects, from improved signal control to enhanced circuit performance. Choose Onsemi for top-of-the-line components that deliver superior results every time.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high minimum quality factor indicates better overall performance and efficiency of the varactor diode, making it a reliable choice for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and reliability, making the varactor diode suitable for a wide range of environments and conditions.

Config: SINGLE

The single configuration simplifies the design and integration process, making it easier to implement the varactor diode into various electronic circuits.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification ensures precise and rapid changes in capacitance, making the varactor diode ideal for applications requiring quick adjustments in capacitance levels.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

The wide frequency band allows the varactor diode to be used in a variety of high-frequency to ultra-high-frequency applications, providing versatility and flexibility in electronic designs.

Surface Mount: YES

The surface mount capability offers easy and convenient mounting onto PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient utilization of board space and easy alignment during assembly, contributing to a streamlined and compact design.

No. of Terminals: 3

The three terminals provide connectivity options for various circuit configurations, offering flexibility in circuit design and integration.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for dense packing of components on the PCB, making it suitable for compact electronic devices.

Terminal Finish: TIN

The tin terminal finish ensures good conductivity and solderability, enhancing the reliability and longevity of the varactor diode in electronic circuits.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting orientations and facilitates easier PCB layout, contributing to a more efficient and optimized circuit design.

Maximum Power Dissipation: 0.225 W

The high maximum power dissipation rating indicates the capability of the varactor diode to handle power efficiently, making it suitable for high-power applications.

Nominal Diode Capacitance: 33 pF

The nominal diode capacitance value of 33 pF provides a standard reference for the capacitance level of the varactor diode, ensuring compatibility with common circuit designs.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures protection against voltage spikes and overloads, enhancing the reliability and safety of the varactor diode in operation.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reflow processes during assembly, maintaining the integrity of the varactor diode.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for reliable and durable solder joints, ensuring long-term performance and stability of the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

The variable capacitance diode type offers adjustable capacitance levels, providing flexibility in tuning circuits and optimizing performance in various applications.

Terminal Form: GULL WING

The gull wing terminal form enables secure and reliable connections on the PCB, ensuring stable electrical connections and robust performance of the varactor diode.

Maximum Repetitive Peak Reverse Voltage: 30 V

The maximum repetitive peak reverse voltage of 30 V guarantees protection against reverse voltage conditions, ensuring the longevity and reliability of the varactor diode in operation.

Diode Cap Tolerance: 10 %

The diode cap tolerance of 10% allows for variations in capacitance levels within an acceptable range, ensuring consistent performance and compatibility with different circuit requirements.

Diode Element Material: SILICON

The silicon diode element material offers excellent thermal stability and reliability, ensuring consistent performance over a wide temperature range and enhancing the durability of the varactor diode.

Minimum Diode Capacitance Ratio: 2.5

The minimum diode capacitance ratio of 2.5 indicates the range of adjustable capacitance levels, providing flexibility in circuit design and tuning capabilities for optimal performance.

Technical Specifications

Varactor Diodes MMBV2109LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MMBV2109LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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