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SVD101

Onsemi

SVD101 by Onsemi

SVD101 by Onsemi is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a nominal capacitance of 1.3 pF, it has a min breakdown voltage of 27 V and max power dissipation of 0.2 W, making it suitable for microwave circuits requiring precise tuning capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,140 parts In-Stock

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Digiode

USA . 700 parts In-Stock

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700

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Kulean Microsystems

USA . 5,619 parts In-Stock

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5,619

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TANS Electronics

Latvia . 1,281 parts In-Stock

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Corphita

USA . 1,243 parts In-Stock

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Problanco Electronics

Mexico . 849 parts In-Stock

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849

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SupplyDigital Components

Austria . 826 parts In-Stock

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UHIMA Technologies

Türkiye . 415 parts In-Stock

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Corohmni

South Africa . 385 parts In-Stock

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Overview

Unlock a world of possibilities with the SVD101 varactor diode by Onsemi. Manufactured with precision and expertise, this hyperabrupt diode is designed for X band applications, offering high performance and reliability. With its variable capacitance and flat terminal form, this diode provides versatile solutions for various electronic circuits. Whether you're a hobbyist or a professional, the SVD101 delivers unparalleled value, benefits, and advantages that will elevate your projects to the next level. Experience the difference with Onsemi's quality diodes today!

Feature Benefit Bullets

Config: SINGLE

Single configuration makes this product easy to use and integrate into electronic circuits.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt classification allows for fast and precise changes in capacitance, making this product ideal for applications requiring rapid tuning.

Frequency Band: X BAND

X band frequency compatibility ensures reliable performance in high-frequency applications.

Surface Mount: YES

Surface mount capability simplifies the assembly process and saves space on the circuit board.

Package Style (Meter): MICROWAVE

Microwave package style enhances the product's ability to handle high-frequency signals with minimal loss.

Maximum Power Dissipation: 0.2 W

High maximum power dissipation allows for efficient operation under varying load conditions.

Nominal Diode Capacitance: 1.3 pF

Low nominal capacitance ensures accurate and stable performance in tuning applications.

Minimum Breakdown Voltage: 27 V

Minimum breakdown voltage of 27 V provides a good safety margin against voltage spikes or surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type offers flexibility in tuning electronic circuits for optimal performance.

Terminal Form: FLAT

Flat terminal form facilitates easy soldering and connection to other components.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum reverse voltage rating ensures reliable operation and protection against reverse voltage conditions.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide material provides excellent performance characteristics for high-frequency applications.

Minimum Diode Capacitance Ratio: 5

Minimum capacitance ratio of 5 allows for a wide range of capacitance values, enabling versatile tuning capabilities.

Technical Specifications

Varactor Diodes SVD101 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

27 V

Config:

SINGLE

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

1.3 pF

Diode Element Material:

GALLIUM ARSENIDE

Frequency Band:

X BAND

JESD-30 Code:

X-XXMW-F2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROWAVE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

SVD101 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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