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BB909B-AMMOPAK

NXP Semiconductors

BB909B-AMMOPAK by NXP Semiconductors

BB909B-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated case connection ensures reliability.

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USA . 1,507 parts In-Stock

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Native Components

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Northwest PG Solutions

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Overview

Unlock superior performance in your high-frequency applications with the BB909B-AMMOPAK from NXP Semiconductors. Renowned for their commitment to quality and innovation, NXP delivers this premium varactor diode, designed to optimize circuit efficiency. Its reliable performance, even at elevated temperatures, ensures exceptional stability and longevity, making it an ideal choice for RF tuning and frequency modulation. Elevate your designs with unmatched value and dependability!

Feature Benefit Bullets

Package Body Material: GLASS

The glass packaging ensures excellent thermal stability and reliability, making this varactor diode suitable for high-frequency applications.

Config: SINGLE

A single configuration simplifies circuit design and integration, allowing for ease of use in various electronic applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this diode is ideal for advanced RF and microwave communications.

Maximum Reverse Current: 0.01 uA

The low maximum reverse current signifies minimal leakage, enhancing performance and efficiency in sensitive applications.

Package Shape: ROUND

The round shape aids in flexibility and compatibility with diverse circuit designs and layouts.

Reverse Test Voltage: 28 V

A robust reverse test voltage indicates strong reverse breakdown characteristics, contributing to the diode's reliable performance.

Number of Terminals: 2

With only two terminals, this diode is straightforward for implementation in various electronic circuits.

Package Style (Meter): LONG FORM

The long form packaging allows for better heat dissipation and positioning flexibility within circuit designs.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature enables this diode to function well in challenging thermal environments.

Terminal Position: AXIAL

The axial terminal position simplifies mounting and facilitates integration into compact designs and PCBs.

Case Connection: ISOLATED

Isolated case connections enhance the device's performance and safety by preventing unwanted interactions with other components.

Minimum Breakdown Voltage: 32 V

A minimum breakdown voltage of 32 V helps to ensure robustness in high-voltage applications, reducing the risk of failure.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it offers tunability, making it an excellent choice for tuning circuits and voltage-controlled oscillators.

Terminal Form: WIRE

Wire terminal form provides versatile connection options which are helpful in custom applications and specific layout configurations.

Diode Element Material: SILICON

Silicon as the diode element material enhances reliability and performance while ensuring cost-effectiveness.

Minimum Diode Capacitance Ratio: 12

A minimum capacitance ratio of 12 allows for significant tuning range, making this diode suitable for a wide variety of applications.

Technical Specifications

Varactor Diodes BB909B-AMMOPAK attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

2.5% MATCHED SETS ARE AVAILABLE

Minimum Breakdown Voltage:

32 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

12

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB909B-AMMOPAK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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