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MV2109RLRP

Onsemi

MV2109RLRP by Onsemi

MV2109RLRP by Onsemi is a varactor diode with a min quality factor of 200, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it ideal for RF tuning circuits in communication systems.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,640 parts In-Stock

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Vyrian

USA . 407 parts In-Stock

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SupplyDigital Components

Austria . 6,554 parts In-Stock

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TANS Electronics

Latvia . 6,295 parts In-Stock

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Problanco Electronics

Mexico . 2,221 parts In-Stock

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Kulean Microsystems

USA . 2,171 parts In-Stock

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Corphita

USA . 281 parts In-Stock

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Corohmni

South Africa . 141 parts In-Stock

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UHIMA Technologies

Türkiye . 33 parts In-Stock

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Overview

Unlock endless possibilities with the MV2109RLRP Varactor Diode from Onsemi. Known for their top-notch quality and innovative technology, Onsemi offers a diode that is perfect for high frequency to ultra high frequency applications. With a minimum quality factor of 200, this diode provides reliable performance and precise capacitance control. Whether you're working on RF tuners, frequency modulators, or voltage-controlled oscillators, the MV2109RLRP offers unmatched value, benefits, and advantages to help you achieve your goals with ease. Elevate your projects today with Onsemi's trusted expertise in semiconductor solutions.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor indicates better performance and higher efficiency for the varactor diode.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and insulation for the diode, extending its lifespan.

Config: SINGLE

Single configuration simplifies the setup and reduces complexity in circuit design.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures rapid and precise changes in capacitance, ideal for high frequency applications.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band coverage enables the diode to be used in a variety of high frequency applications.

Package Shape: ROUND

Round package shape allows for easy installation and better heat dissipation.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and enhances ease of use.

Package Style (Meter): CYLINDRICAL

Cylindrical package style makes it compatible with standard sockets and mounting options.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability for efficient connections.

Terminal Position: BOTTOM

Bottom terminal position improves stability and makes it easier to solder.

Maximum Power Dissipation: 0.28 W

High power dissipation allows the diode to handle high power applications with ease.

Nominal Diode Capacitance: 33 pF

Nominal capacitance value ensures the diode can effectively adjust capacitance as required in circuits.

Minimum Breakdown Voltage: 30 V

Having a minimum breakdown voltage of 30V provides protection against voltage spikes and overloads.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures durability and reliability during soldering.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for precise control and adjustment in capacitance values.

Terminal Form: THROUGH-HOLE

Through-hole terminal form offers secure mechanical connections for stability in the circuit.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage rating ensures protection against reverse voltage conditions.

Diode Cap Tolerance: 10 %

Capacitance tolerance of 10% provides accuracy and consistency in capacitance values.

Diode Element Material: SILICON

Silicon material ensures reliable performance and stability for the diode in various operating conditions.

Minimum Diode Capacitance Ratio: 2.5

Having a minimum capacitance ratio of 2.5 allows for greater flexibility in adjusting capacitance for different applications.

Technical Specifications

Varactor Diodes MV2109RLRP attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MV2109RLRP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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