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MMVL809T1

Onsemi

MMVL809T1 by Onsemi

MMVL809T1 by Onsemi is a varactor diode with 5.3pF capacitance, 20V breakdown voltage, and 0.2W power dissipation. Ideal for ultra high frequency applications, it features a small outline package and Gull Wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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R&J Components

USA . 2,665 parts In-Stock

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Vyrian

USA . 1,883 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 8,380 parts In-Stock

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Problanco Electronics

Mexico . 5,941 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Corphita

USA . 2,466 parts In-Stock

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Kulean Microsystems

USA . 2,413 parts In-Stock

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SupplyDigital Components

Austria . 1,172 parts In-Stock

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UHIMA Technologies

Türkiye . 539 parts In-Stock

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Corohmni

South Africa . 326 parts In-Stock

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Overview

Discover the MMVL809T1 by Onsemi, a top-quality varactor diode that offers unmatched performance in the ultra-high frequency range. With a compact design and reliable construction using plastic/epoxy materials, this single-config diode is perfect for a wide range of applications. From telecommunications to radar systems, this diode provides exceptional value and benefits to customers looking for precision and efficiency. Trust Onsemi's reputation for excellence and choose the MMVL809T1 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the varactor diode, ensuring long-term reliability.

Frequency Band: ULTRA HIGH FREQUENCY

The ultra high frequency band allows for high-speed and high-performance applications, making this varactor diode suitable for advanced electronic devices.

Surface Mount: YES

Being surface mountable makes for easy and efficient PCB assembly, saving time and effort during production.

Nominal Diode Capacitance: 5.3 pF

The low nominal diode capacitance of 5.3 pF enables precise control over the capacitance in circuit designs, making this varactor diode ideal for applications requiring fine tuning.

Minimum Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this varactor diode can handle higher voltages, providing a robust and reliable performance in demanding environments.

Technical Specifications

Varactor Diodes MMVL809T1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Diode Cap Tolerance:

15.09 %

Minimum Diode Capacitance Ratio:

1.8

Nominal Diode Capacitance:

5.3 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMVL809T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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