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MV2105G

Onsemi

MV2105G by Onsemi

MV2105G by Onsemi is a varactor diode with a min quality factor of 400, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 15 pF and a max operating temperature of 150 °C. With a single configuration and abrupt variable capacitance classification, it is suitable for RF tuning circuits in various electronic devices.

Median Price

$0.358

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,690 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.263

10k+ parts

$0.235

6,690

-

$0.317

$0.263

$0.235

DigiKey

USA . 6,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.400

10k+ parts

-

6,690

-

-

$0.400

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 645 parts In-Stock

1+ parts

$0.230

100+ parts

-

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645

$0.230

-

-

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Digiode

USA . 753 parts In-Stock

1+ parts

$0.247

100+ parts

-

1k+ parts

-

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-

753

$0.247

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 381 parts In-Stock

1+ parts

$0.230

100+ parts

-

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-

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381

$0.230

-

-

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Corphita

USA . 1,135 parts In-Stock

1+ parts

$0.234

100+ parts

-

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-

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-

1,135

$0.234

-

-

-

Component Stockers USA

USA . 5,194 parts In-Stock

1+ parts

$0.260

100+ parts

$0.250

1k+ parts

$0.220

10k+ parts

-

5,194

$0.260

$0.250

$0.220

-

Benley Electronics

USA . 100 parts In-Stock

1+ parts

$0.400

100+ parts

-

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100

$0.400

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 26,233 parts In-Stock

1+ parts

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26,233

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TANS Electronics

Latvia . 7,887 parts In-Stock

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7,887

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Continental Prestige Electronics

USA . 6,720 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.230

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6,720

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-

$0.230

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SupplyDigital Components

Austria . 3,280 parts In-Stock

1+ parts

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3,280

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Problanco Electronics

Mexico . 1,528 parts In-Stock

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1,528

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ChipstoGo Electronic ltd

UK . 935 parts In-Stock

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935

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UHIMA Technologies

Türkiye . 473 parts In-Stock

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473

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Kulean Microsystems

USA . 150 parts In-Stock

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150

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Authorized Procurement Solutions

USA . 115 parts In-Stock

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115

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GreenTree Electronics

Israel . 115 parts In-Stock

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115

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Overview

Unleash the power of high-frequency electronics with the Onsemi MV2105G Varactor Diode. Manufactured by Onsemi, a leader in semiconductor technology, this diode offers a minimum quality factor of 400 and a nominal capacitance of 15pF, making it ideal for applications in the high-frequency to ultra-high-frequency range. With a maximum operating temperature of 150 °C and a rugged cylindrical package design, the MV2105G ensures reliable performance in demanding environments. Upgrade your electronic designs with the precision and quality of Onsemi's Varactor Diodes.

Feature Benefit Bullets

Minimum Quality Factor: 400

High minimum quality factor ensures optimal performance and low losses, making this product suitable for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as package body material provides durability and protection, ideal for various environmental conditions.

Config: SINGLE

Single configuration simplifies design and integration, making it user-friendly and easy to implement.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance classification allows for precise tuning and control, enabling efficient signal manipulation.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band coverage makes this diode suitable for a range of high frequency to ultra high frequency applications.

Package Shape: ROUND

Round package shape provides compactness and ease of mounting, contributing to space-saving designs.

No. of Terminals: 2

Having 2 terminals simplifies circuit connection and enhances overall reliability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers structural stability and ease of handling during installation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand elevated temperature conditions without compromising performance.

Terminal Finish: TIN SILVER COPPER

The use of tin, silver, and copper terminal finish enhances conductivity and ensures long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position facilitates efficient PCB layout and assembly, optimizing space utilization.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation value, this diode can handle power efficiently, minimizing the risk of overheating.

Nominal Diode Capacitance: 15 pF

The nominal diode capacitance value of 15 pF enables precise tuning and control over capacitance, enhancing signal processing capabilities.

Minimum Breakdown Voltage: 30 V

Having a high minimum breakdown voltage of 30 V ensures protection against voltage spikes and overloads, enhancing overall reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability of 260 °C allows for reliable soldering and rework processes.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode enables dynamic adjustment of capacitance, offering flexibility in tuning circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures secure mechanical connection and reliable solder joints, enhancing durability and ease of mounting.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage rating of 30 V ensures robust protection against reverse polarity conditions.

Diode Cap Tolerance: 10 %

The diode capacitance tolerance of 10% provides consistency in performance and tuning accuracy, enhancing overall reliability.

Diode Element Material: SILICON

The use of silicon as diode element material ensures stable performance across varying temperature ranges and environmental conditions.

Minimum Diode Capacitance Ratio: 2.5

Having a minimum diode capacitance ratio of 2.5 provides a wide range of capacitance adjustment, enabling fine-tuning of circuit parameters.

Technical Specifications

Varactor Diodes MV2105G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MV2105G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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