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1N5448

Onsemi

1N5448 by Onsemi

1N5448 by Onsemi is a varactor diode with a min quality factor of 350 and max reverse current of 0.00000002 uA. It has a nominal capacitance of 22 pF, making it ideal for applications requiring variable capacitance diodes in electronic circuits. With an operating temperature range from -65 to 175 °C, this diode offers precise control over capacitance levels in RF tuning circuits.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 2,480 parts In-Stock

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Vyrian

USA . 922 parts In-Stock

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Native Components

USA . 753 parts In-Stock

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$1.873

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Northwest PG Solutions

USA . 1,964 parts In-Stock

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Problanco Electronics

Mexico . 6,507 parts In-Stock

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Kulean Microsystems

USA . 3,913 parts In-Stock

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TANS Electronics

Latvia . 3,020 parts In-Stock

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SupplyDigital Components

Austria . 1,987 parts In-Stock

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Corphita

USA . 532 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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UHIMA Technologies

Türkiye . 462 parts In-Stock

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Overview

Unleash the power of innovation with the 1N5448 Varactor Diode from Onsemi. Designed for precision and reliability, this diode offers unparalleled quality and performance in a variety of applications. With a minimum quality factor of 350 and a maximum reverse current of just 0.00000002 uA, this diode provides superior functionality and efficiency. Whether you're working on telecommunications, radar systems, or frequency tuning, the 1N5448 is the perfect choice for your project. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your designs with the 1N5448 Varactor Diode today!

Feature Benefit Bullets

Minimum Quality Factor: 350

High quality factor ensures good performance and efficiency in signal processing applications.

Package Body Material: GLASS

Glass package offers excellent durability and stability for the diode, making it suitable for long-term use.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic systems.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diodes provide precise and rapid changes in capacitance, ideal for frequency tuning and filtering applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and improved signal integrity in applications where low leakage is critical.

Package Shape: ROUND

Round package shape allows for efficient mounting and placement in compact electronic devices.

Reverse Test Voltage: 25 V

Suitable reverse test voltage rating provides reliable protection against reverse bias conditions, ensuring the diode's longevity.

No. of Terminals: 2

Simple two-terminal design offers easy connectivity and integration into electronic circuits.

Package Style (Meter): LONG FORM

Long form package style provides ample space for terminal connections and facilitates heat dissipation for improved reliability.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for versatile usage in various environmental conditions without performance degradation.

Minimum Operating Temperature: -65 °C

Wide temperature range enables the diode to function reliably in both extreme hot and cold environments.

Terminal Finish: TIN LEAD

Tin-lead terminal finish offers good solderability and conductivity for secure connections in electronic assemblies.

Terminal Position: AXIAL

Axial terminal position simplifies installation and alignment of the diode in circuit boards, ensuring accurate placement.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and enhances signal purity in high-frequency applications.

Maximum Power Dissipation: 0.4 W

High power dissipation capability enables the diode to handle increased power levels without overheating, ensuring stable performance.

Nominal Diode Capacitance: 22 pF

Nominal capacitance value provides a standard reference for tuning and frequency adjustment in various electronic circuits.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage rating offers robust protection against voltage spikes and ensures long-term reliability.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for precise tuning of capacitance, making it suitable for frequency modulation and signal processing applications.

Terminal Form: WIRE

Wire terminal form allows for flexible connection options and secure mounting in electronic assemblies.

Maximum Repetitive Peak Reverse Voltage: 30 V

High peak reverse voltage rating ensures reliable operation under reverse bias conditions without breakdown.

Diode Cap Tolerance: 20%

Tight capacitance tolerance ensures consistent performance and accuracy in frequency-dependent applications.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and stability in various operating conditions, ensuring long-term performance.

Minimum Diode Capacitance Ratio: 2.6

High diode capacitance ratio allows for wide tuning range and precise frequency adjustment in electronic circuits.

Technical Specifications

Varactor Diodes 1N5448 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5448 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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