Loading...

1N5451

Onsemi

1N5451 by Onsemi

1N5451 by Onsemi is a Varactor Diode with 39pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,339 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,339

-

-

-

-

Electronics Depot

USA . 649 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

649

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 387 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

387

-

-

-

-

Digiode

USA . 124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

124

-

-

-

-

Mil-Aero Solutions, Inc.

USA . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

LittleDiode

UK . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 793 parts In-Stock

1+ parts

$1.271

100+ parts

-

1k+ parts

-

10k+ parts

-

793

$1.271

-

-

-

Northwest PG Solutions

USA . 1,972 parts In-Stock

1+ parts

$1.398

100+ parts

-

1k+ parts

-

10k+ parts

-

1,972

$1.398

-

-

-

Problanco Electronics

Mexico . 6,849 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,849

-

-

-

-

TANS Electronics

Latvia . 4,795 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,795

-

-

-

-

Kulean Microsystems

USA . 3,652 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,652

-

-

-

-

SupplyDigital Components

Austria . 2,266 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,266

-

-

-

-

Corphita

USA . 2,225 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,225

-

-

-

-

UHIMA Technologies

Türkiye . 775 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

775

-

-

-

-

Corohmni

South Africa . 307 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

307

-

-

-

-

Overview

Unlock the potential of your electronic devices with the 1N5451 Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge technology that exceeds industry standards. Whether you're designing telecommunications equipment, radar systems, or frequency tuning circuits, this diode offers unmatched performance and precision. With a high-quality factor of 300 and a variable capacitance design, the 1N5451 provides unparalleled functionality and efficiency. Trust Onsemi to power your innovation with the best-in-class diodes on the market.

Feature Benefit Bullets

Minimum Quality Factor: 300

A high quality factor indicates good stability and minimal losses, making this varactor diode reliable for various applications.

Package Body Material: GLASS

Glass provides good insulation properties and durability, ensuring the diode is protected from external elements.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to incorporate in various electronics projects.

Variable Capacitance Diode Classification: ABRUPT

An abrupt varactor diode offers precise and rapid capacitance changes, allowing for fine-tuning in frequency-dependent applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current reduces power consumption and improves efficiency, enhancing the overall performance of the diode.

Package Shape: ROUND

Round shape facilitates easy mounting and handling, making it user-friendly for installation.

Reverse Test Voltage: 25 V

With a high reverse test voltage, this varactor diode can withstand voltage spikes and reverse polarity without damage.

No. of Terminals: 2

Having two terminals simplifies the connection process and ensures compatibility with standard circuit configurations.

Package Style (Meter): LONG FORM

Long form package style provides ample space for circuitry and heat dissipation, enhancing the overall performance and reliability of the diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature makes this diode suitable for demanding environments and ensures reliable performance under varying conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for use in a wide range of environments, making this diode versatile and adaptable.

Terminal Finish: TIN LEAD

Tin lead finish ensures good conductivity and solderability, simplifying the installation process and ensuring a secure connection.

Terminal Position: AXIAL

Axial terminal position makes it easy to connect the diode in a circuit, enhancing usability and installation convenience.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and ensures the diode operates independently, enhancing signal integrity and reliability.

Maximum Power Dissipation: 0.4 W

With a high maximum power dissipation, this varactor diode can handle heavy loads and high power levels without overheating or damage.

Nominal Diode Capacitance: 39 pF

The nominal capacitance value ensures consistent performance and accurate tuning capabilities for frequency-dependent applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage provides protection against voltage spikes and ensures the diode can withstand high voltage conditions without failing.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers flexibility in tuning and frequency control, making it ideal for RF and microwave applications.

Terminal Form: WIRE

Wire terminal form allows for easy connection and integration in various circuit setups, enhancing versatility and usability.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage ensures longevity and reliability in demanding applications, making this diode a durable choice.

Diode Cap Tolerance: 20 %

The tolerance level indicates the accuracy of capacitance values, ensuring consistent performance and precise tuning capabilities in frequency-dependent circuits.

Diode Element Material: SILICON

Silicon is a widely used material in diode manufacturing due to its reliability, durability, and consistent performance, making this varactor diode a trusted choice.

Minimum Diode Capacitance Ratio: 2.6

A high minimum capacitance ratio provides a wide tuning range and flexibility in frequency control, making this diode suitable for a variety of applications.

Technical Specifications

Varactor Diodes 1N5451 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

39 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

300

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5451 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

1660-99-224-4022, 1660992244022

NIIN

992244022

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20