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BB219TRL

NXP Semiconductors

BB219TRL by NXP Semiconductors

BB219TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,796 parts In-Stock

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Vyrian

USA . 3,782 parts In-Stock

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Anansix

USA . 929 parts In-Stock

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929

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One Stop Electronics

USA . 680 parts In-Stock

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$1.010

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680

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UNI Independent Distributors

Spain . 3,842 parts In-Stock

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Corphita

USA . 1,221 parts In-Stock

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Northwest PG Solutions

USA . 915 parts In-Stock

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915

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Native Components

USA . 770 parts In-Stock

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770

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Overview

Unlock precision tuning and superior performance with the BB219TRL from NXP Semiconductors, a trusted leader in innovative electronic solutions. This varactor diode excels in very high-frequency applications, offering unmatched quality and reliability for your designs. Its unique features ensure optimal capacitance control, making it ideal for RF circuits in telecommunications and signal processing. Enhance your projects with cutting-edge technology that delivers exceptional value and efficiency.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material provides excellent thermal stability and electrical insulation, making it suitable for high-frequency applications.

Config: SINGLE

A single configuration simplifies circuit design and integration, reducing complexity and potential points of failure.

Frequency Band: VERY HIGH FREQUENCY

Operating effectively in the very high frequency band ensures the diode can be used in advanced communication systems and RF applications.

Surface Mount: YES

Surface mount capability enables compact designs, high-density circuit layouts, and automated assembly methods, enhancing production efficiency.

Package Shape: ROUND

The round package shape is advantageous for various PCB layouts and provides uniform electrical characteristics across the device.

No. of Terminals: 2

With only two terminals, this diode is easy to integrate into circuits, leading to reduced soldering time and improved reliability.

Package Style (Meter): LONG FORM

The long-form package style allows for better heat dissipation and can enhance performance in high-power applications.

Terminal Position: END

End terminal positioning offers straightforward connections to the PCB and facilitates easier circuit design.

Case Connection: ISOLATED

An isolated case connection minimizes parasitic capacitance and provides improved performance in sensitive applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it can tune circuits dynamically, making it essential for applications like voltage-controlled oscillators and RF tuning.

Terminal Form: WRAP AROUND

Wrap around terminals enhance mechanical strength and provide reliable connections on the PCB, ensuring long-term durability.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent performance characteristics, including high capacitance efficiency and low noise.

Minimum Diode Capacitance Ratio: 12

A minimum diode capacitance ratio of 12 allows for substantial tuning range, making this diode highly versatile for various applications.

Technical Specifications

Varactor Diodes BB219TRL attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

3% MATCHED SETS ARE AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

12

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LELF-R2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Trade Compliance

BB219TRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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