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BB212-AMMOPAK

NXP Semiconductors

BB212-AMMOPAK by NXP Semiconductors

BB212-AMMOPAK by NXP Semiconductors is a variable capacitance diode featuring a common cathode configuration with 2 elements. It has a min capacitance ratio of 22.5 and comes in a cylindrical plastic/epoxy package, ideal for RF tuning applications. With its through-hole design and silicon material, it ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,024 parts In-Stock

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4,024

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Digiode

USA . 1,748 parts In-Stock

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1,748

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Anansix

USA . 181 parts In-Stock

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181

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One Stop Electronics

USA . 691 parts In-Stock

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$0.010

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691

$0.010

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Native Components

USA . 6 parts In-Stock

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$18.098

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6

$18.098

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Northwest PG Solutions

USA . 629 parts In-Stock

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$19.908

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$17.917

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629

$19.908

$17.917

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UNI Independent Distributors

Spain . 6,055 parts In-Stock

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Corphita

USA . 2,483 parts In-Stock

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Overview

Unlock unparalleled performance with the BB212-AMMOPAK from NXP Semiconductors, a leader in innovative electronic solutions. This high-quality varactor diode excels in tuning and frequency modulation applications, delivering exceptional stability and reliability for your designs. Experience enhanced circuit efficiency and flexibility, ensuring your projects achieve optimal results. Elevate your technology with the trusted expertise of NXP, where quality meets innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides protection against environmental factors, enhancing the reliability and longevity of the diode.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for easier circuit design and efficiency in signal processing applications with multiple diodes.

Package Shape: ROUND

The round package shape supports uniform heat dissipation during operation, contributing to stable performance under varying conditions.

No. of Terminals: 3

The three terminals facilitate straightforward connections in circuit designs, optimizing integration and flexibility.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact, making it suitable for a variety of applications while minimizing space requirements on PCB.

Terminal Position: BOTTOM

Bottom terminal positioning enhances the mounting stability and assembly efficiency in through-hole applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it offers tunable capacitance values, making it ideal for RF applications and voltage-controlled oscillators.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides robust mechanical support and easy soldering, ensuring secure connections in various environments.

No. of Elements: 2

Having two elements increases versatility and allows for wider operational capabilities in circuit designs requiring dual modulation.

Diode Element Material: SILICON

Silicon's excellent semiconductor properties ensure high performance and stable operation across a range of temperatures.

Minimum Diode Capacitance Ratio: 22.5

A high capacitance ratio enhances tuning range and versatility, making this diode suitable for sophisticated applications in communication systems.

Technical Specifications

Varactor Diodes BB212-AMMOPAK attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Minimum Diode Capacitance Ratio:

22.5

Diode Element Material:

SILICON

JESD-30 Code:

O-PBCY-T3

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB212-AMMOPAK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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