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934042930135

NXP Semiconductors

934042930135 by NXP Semiconductors

The NXP 934042930135 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact surface mount design ensures efficient space utilization in circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,400 parts In-Stock

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4,400

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Vyrian

USA . 4,189 parts In-Stock

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4,189

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Anansix

USA . 259 parts In-Stock

1+ parts

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259

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,964 parts In-Stock

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3,964

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Overview

Experience unmatched performance with the 934042930135 varactor diode from NXP Semiconductors. Renowned for their commitment to quality and innovation, NXP delivers a product that enhances tuning capabilities in RF applications, enabling superior signal manipulation. Its compact design ensures efficient use of space while providing exceptional reliability across temperatures. Elevate your projects with this versatile solution that promises both value and enhanced functionality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection against environmental factors, making it suitable for various applications.

Config: SINGLE

The single configuration makes it easy to integrate into circuits with minimal space requirements.

Surface Mount: YES

Surface mount capability allows for efficient assembly and is ideal for compact circuit designs.

Maximum Reverse Current: 0.01 uA

A very low maximum reverse current contributes to low power losses and enhances efficiency in voltage control applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, allowing for denser circuit layouts.

Reverse Test Voltage: 10 V

With a reverse test voltage of 10 V, this diode can be tested reliably in various circuit conditions without failure.

No. of Terminals: 2

The two-terminal design simplifies circuit integration and minimizes the complexity of connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style is perfect for minimizing PCB footprint while maintaining component performance.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature indicates good thermal stability, making it suitable for high-temperature applications.

Minimum Operating Temperature: -55 °C

The capability to operate at very low temperatures makes this diode suitable for extreme environments.

Terminal Position: DUAL

Dual terminal positioning allows for flexible mounting options, accommodating various PCB designs.

Maximum Power Dissipation: 0.2 W

A maximum power dissipation of 0.2 W suggests the device can handle reasonable levels of power without overheating.

Minimum Breakdown Voltage: 10 V

With a minimum breakdown voltage of 10 V, this diode provides reliable operation in circuits requiring moderate voltage handling.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it is specifically designed for tuning applications, making it an ideal choice for RF circuits.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve mechanical stability, enhancing assembly reliability.

Diode Element Material: SILICON

Being made of silicon ensures excellent semiconductor properties, leading to better performance and reliability.

Minimum Diode Capacitance Ratio: 1.6929

A minimum diode capacitance ratio of 1.6929 indicates good tuning capability, essential for applications in oscillators and RF circuits.

Technical Specifications

Varactor Diodes 934042930135 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

10 V

Config:

SINGLE

Minimum Diode Capacitance Ratio:

1.6929

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

934042930135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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