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BB219TRL13

NXP Semiconductors

BB219TRL13 by NXP Semiconductors

BB219TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Anansix

USA . 2,342 parts In-Stock

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Digiode

USA . 488 parts In-Stock

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Vyrian

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One Stop Electronics

USA . 1,548 parts In-Stock

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$2.010

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Native Components

USA . 715 parts In-Stock

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$12.222

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715

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Northwest PG Solutions

USA . 973 parts In-Stock

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$13.444

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$12.099

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973

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$12.099

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UNI Independent Distributors

Spain . 7,312 parts In-Stock

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Corphita

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Overview

Unlock unparalleled performance with the BB219TRL13 varactor diode from NXP Semiconductors. Renowned for its quality and reliability, this silicon-based solution excels in very high frequency applications, ensuring optimal tuning and efficiency. Elevate your designs with its innovative wrap-around terminal form and isolated case connection, tailored for seamless integration. Experience the NXP advantage—where cutting-edge technology meets exceptional value, driving your projects forward with confidence!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material enhances durability and ensures protection against environmental factors, making this varactor diode suitable for various applications.

Config: SINGLE

A single configuration simplifies circuit design and integration, making it easier to incorporate this diode into various high-frequency applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency operations, this varactor diode excels in RF applications and provides optimal performance in tuning circuits.

Surface Mount: YES

Surface mount capability allows for compact designs and improved manufacturing efficiency, making it ideal for modern electronic devices.

Package Shape: ROUND

The round package shape offers a consistent footprint that can fit easily into many configurations, allowing for versatile design options.

No. of Terminals: 2

With only two terminals, this diode facilitates easy integration and minimizes space requirements on circuit boards.

Package Style (Meter): LONG FORM

The long form package style can improve thermal performance and allows better compatibility with various mounting techniques.

Terminal Position: END

End terminal positioning allows for straightforward connections in layouts, simplifying assembly and improving reliability.

Case Connection: ISOLATED

Isolated case connection helps prevent unwanted interactions with other circuit elements, ensuring stability and performance in sensitive applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it provides adjustable capacitance based on voltage, making it ideal for tuning and frequency modulation applications.

Terminal Form: WRAP AROUND

Wrap around terminal form enhances soldering characteristics and ensures secure connections, increasing overall reliability in the circuit.

Diode Element Material: SILICON

Using silicon for the diode element offers excellent performance characteristics, high reliability, and robustness in various environments.

Minimum Diode Capacitance Ratio: 12

A minimum diode capacitance ratio of 12 ensures significant capacitance variation, allowing for effective tuning capabilities across a range of frequencies.

Technical Specifications

Varactor Diodes BB219TRL13 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

3% MATCHED SETS ARE AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

12

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LELF-R2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Trade Compliance

BB219TRL13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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