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1N4806

Onsemi

1N4806 by Onsemi

1N4806 by Onsemi is a Varactor Diode with 18pF capacitance, 99V breakdown voltage, and 0.5W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 150°C.

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1k+

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Digiode

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Vyrian

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Northwest PG Solutions

USA . 2,014 parts In-Stock

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Kulean Microsystems

USA . 6,263 parts In-Stock

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Problanco Electronics

Mexico . 5,596 parts In-Stock

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SupplyDigital Components

Austria . 2,189 parts In-Stock

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Corphita

USA . 1,455 parts In-Stock

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UHIMA Technologies

Türkiye . 532 parts In-Stock

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Corohmni

South Africa . 416 parts In-Stock

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TANS Electronics

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Native Components

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Overview

Unlock the power of advanced technology with the 1N4806 Varactor Diode by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-quality products that deliver outstanding performance. Ideal for applications such as frequency tuning and voltage-controlled oscillators, this diode offers customers unparalleled value and benefits. With a high minimum quality factor and precise variable capacitance, the 1N4806 ensures optimal functionality and reliability. Trust Onsemi to provide you with cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Minimum Quality Factor: 15

A high minimum quality factor ensures better performance and reliable operation of the varactor diode.

Package Body Material: GLASS

Glass package provides better protection and thermal performance for the varactor diode.

Config: SINGLE

Single configuration simplifies the circuit design and integration of the varactor diode.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification provides precise and rapid change in capacitance in response to voltage variations.

Maximum Reverse Current: 0.000000005 uA

Low maximum reverse current ensures low power consumption and minimal leakage currents in the circuit.

Package Shape: ROUND

Round package shape allows for easy mounting and integration in various electronic applications.

Reverse Test Voltage: 90 V

High reverse test voltage rating provides reliable reverse bias protection for the diode.

No. of Terminals: 2

Having 2 terminals simplifies the connection and usage of the varactor diode in circuit designs.

Package Style (Meter): LONG FORM

Long form package style offers better heat dissipation and mechanical stability for the diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in harsh environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode can operate efficiently in a wide range of temperature conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures secure connections in the circuit.

Terminal Position: AXIAL

Axial terminal position simplifies the mounting and placement of the diode in various electronic applications.

Case Connection: ISOLATED

Isolated case connection provides better electrical insulation and protection for the diode.

Maximum Power Dissipation: 0.5 W

The high maximum power dissipation rating allows the varactor diode to handle higher power loads without overheating.

Nominal Diode Capacitance: 18 pF

Optimal nominal capacitance ensures precise tuning and modulation capabilities in electronic circuits.

Minimum Breakdown Voltage: 99 V

High minimum breakdown voltage provides reliable protection against voltage spikes and ensures long-term durability of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it offers the flexibility to tune and adjust capacitance based on voltage input.

Terminal Form: WIRE

Wire terminal form simplifies the connection and integration of the diode in various circuit designs.

Maximum Repetitive Peak Reverse Voltage: 90 V

High maximum repetitive peak reverse voltage rating ensures reliability and durability in demanding applications.

Diode Cap Tolerance: 20 %

A 20% tolerance ensures consistency and accuracy in capacitance values across different batches of diodes.

Diode Element Material: SILICON

Silicon diode element material provides high performance and reliability in electronic circuits.

Minimum Diode Capacitance Ratio: 2.36

A higher minimum capacitance ratio enables better tuning and modulation capabilities in electronic circuits.

Technical Specifications

Varactor Diodes 1N4806 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

99 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.36

Nominal Diode Capacitance:

18 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

90 V

Maximum Reverse Current:

.000000005 uA

Reverse Test Voltage:

90 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4806 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-087-8719, 5961000878719

NIIN

000878719

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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