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MMBV609LT1G

Onsemi

MMBV609LT1G by Onsemi

MMBV609LT1G by Onsemi is a Varactor Diode with 29pF nominal capacitance, 20V breakdown voltage, and 250 min quality factor. It is ideal for Very High Frequency applications due to its Hyperabrupt diode classification and common cathode configuration. The diode's small outline package and gull wing terminal form make it suitable for surface mount designs requiring high-frequency performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Bristol Electronics

USA . 88,212 parts In-Stock

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PC Components Company LLC

USA . 16,326 parts In-Stock

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Vyrian

USA . 6,333 parts In-Stock

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Digiode

USA . 1,716 parts In-Stock

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Semi Source

USA . 14 parts In-Stock

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AZTECH Wire

Italy . 128 parts In-Stock

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$19.990

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128

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,291 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Kulean Microsystems

USA . 6,054 parts In-Stock

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Problanco Electronics

Mexico . 4,636 parts In-Stock

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TANS Electronics

Latvia . 3,846 parts In-Stock

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SupplyDigital Components

Austria . 2,444 parts In-Stock

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Corphita

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Corohmni

South Africa . 349 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 54 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the MMBV609LT1G varactor diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products that exceed expectations. The MMBV609LT1G is perfect for very high-frequency applications, offering a minimum quality factor of 250 and a hyperabrupt variable capacitance diode classification. With a compact package design and dual terminals, this diode provides excellent performance and reliability. Trust Onsemi to bring innovation and efficiency to your projects with the MMBV609LT1G varactor diode.

Feature Benefit Bullets

Minimum Quality Factor: 250

A high quality factor indicates that this varactor diode has low losses, making it efficient and effective in high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and protection for the varactor diode, increasing its durability and reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Having a common cathode configuration with 2 elements allows for more precise control and tuning of capacitance in circuit designs.

Variable Capacitance Diode Classification: HYPERABRUPT

The hyperabrupt classification indicates a steep change in capacitance with voltage, which is beneficial for frequency tuning applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode is suitable for use in RF circuits and communication systems.

Surface Mount: YES

Being surface mountable makes it easier for integration into circuit boards, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and alignment on PCBs, facilitating efficient assembly.

No. of Terminals: 3

Having 3 terminals provides more connection options and flexibility in circuit designs.

Package Style: SMALL OUTLINE

The small outline package style is compact and space-saving, ideal for modern electronics with limited space.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this varactor diode can withstand elevated temperatures, ensuring reliable performance in various conditions.

Terminal Finish: TIN

The tin terminal finish offers good conductivity and corrosion resistance, ensuring stable connections for the varactor diode.

Terminal Position: DUAL

Dual terminal position provides multiple connection points, enhancing versatility in circuit design and layout.

Maximum Power Dissipation: 0.225 W

A high maximum power dissipation rating indicates that this varactor diode can handle and dissipate heat effectively, preventing overheating.

Nominal Diode Capacitance: 29 pF

The nominal capacitance value of 29 pF provides a standard reference for tuning and adjusting capacitance in RF circuits.

Minimum Breakdown Voltage: 20 V

The minimum breakdown voltage of 20 V ensures that the varactor diode can handle voltage spikes and surges without failing.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time of 30 seconds at peak temperature simplifies the manufacturing process and reduces the risk of component damage.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this varactor diode can withstand high-temperature soldering processes without degradation.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product is specifically designed for applications where adjustable capacitance is required, such as frequency tuning.

Terminal Form: GULL WING

The gull wing terminal form offers secure and reliable solder connections, ensuring proper contact and conductivity in circuit applications.

No. of Elements: 2

Having 2 elements allows for greater tuning range and flexibility in adjusting capacitance to meet specific circuit requirements.

Maximum Repetitive Peak Reverse Voltage: 20 V

The maximum repetitive peak reverse voltage of 20 V indicates the maximum voltage the diode can withstand in reverse bias, ensuring protection against voltage spikes.

Diode Cap Tolerance: 10.34%

The diode cap tolerance of 10.34% indicates the accuracy of the capacitance value, ensuring consistent performance and reliability in circuit operation.

Diode Element Material: SILICON

Utilizing silicon as the diode element material provides stability, consistency, and reliability in performance for various electronic applications.

Minimum Diode Capacitance Ratio: 1.8

The minimum capacitance ratio of 1.8 indicates the range of capacitance adjustment available, allowing for precise tuning and optimization in circuit designs.

Technical Specifications

Varactor Diodes MMBV609LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q

Minimum Breakdown Voltage:

20 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

1.8

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

250

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV609LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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