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MMBV2105LT1G

Onsemi

MMBV2105LT1G by Onsemi

MMBV2105LT1G by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and max operating temperature of 150 °C. It is used in applications requiring variable capacitance such as RF tuning circuits.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 8,251 parts In-Stock

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R&J Components

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ACDS - Activité Composants Distribution Service

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Component Electronics Inc.

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Digiode

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AZTECH Wire

Italy . 693 parts In-Stock

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Component Stockers USA

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

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SupplyDigital Components

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TANS Electronics

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Problanco Electronics

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Discover the unmatched quality and reliability of the MMBV2105LT1G by Onsemi, a leading manufacturer in the industry. As a varactor diode, this product offers exceptional performance and versatility in a wide range of applications. With a minimum Quality Factor of 400 and a compact SINGLE configuration, this diode delivers superior functionality while maintaining a high level of efficiency. Whether used in communication systems, tuning circuits, or frequency modulators, the MMBV2105LT1G provides customers with value, benefits, and advantages that set it apart from the competition. Experience the difference with this innovative solution from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 400

Higher quality factor ensures better performance and stability, making this product a reliable choice for various applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good protection and durability to the varactor diode, enhancing its longevity and reliability.

Config: SINGLE

Single configuration simplifies the design and integration process, making it easier to use in different circuits and applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and enabling high-density designs.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easier handling and placement during assembly, contributing to overall efficiency.

No. of Terminals: 3

Having 3 terminals provides flexibility in connectivity options, allowing for versatile use in different circuit configurations.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the varactor diode can withstand harsh environmental conditions, making it suitable for a wide range of applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable performance over time.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation rating, this varactor diode can handle power efficiently without overheating, making it a robust choice for demanding applications.

Nominal Diode Capacitance: 15 pF

Nominal capacitance value of 15 pF indicates the varactor diode's ability to efficiently store and release charge, essential for various voltage-controlled applications.

Minimum Breakdown Voltage: 30 V

Having a minimum breakdown voltage of 30 V ensures protection against voltage surges and spikes, enhancing the reliability of the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for precise voltage tuning and frequency control, making it suitable for applications where flexibility is required.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage rating ensures the varactor diode can handle reverse voltage without damage, enhancing its durability and reliability.

Diode Cap Tolerance: 10 %

Having a tolerance of 10% ensures consistent performance and accuracy in capacitance values, making this varactor diode a reliable choice for precise applications.

Minimum Diode Capacitance Ratio: 2.5

A minimum capacitance ratio of 2.5 indicates the varactor diode's ability to provide a wide range of capacitance values, allowing for greater flexibility in tuning and adjustment.

Technical Specifications

Varactor Diodes MMBV2105LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBV2105LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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