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MMBV105GLT1

Onsemi

MMBV105GLT1 by Onsemi

MMBV105GLT1 by Onsemi is a single varactor diode with hyperabrupt capacitance classification. It operates in the ultra high frequency band, offering a min quality factor of 250 and nominal capacitance of 2.15 pF. Ideal for applications requiring variable capacitance control in small outline packages.

Median Price

$0.292

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 32,671 parts In-Stock

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$0.304

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$0.252

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$0.225

32,671

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$0.304

$0.252

$0.225

DigiKey

USA . 32,671 parts In-Stock

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$0.380

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$0.380

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Farnell

UK . 32,671 parts In-Stock

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$0.220

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Verical

USA . 32,671 parts In-Stock

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$0.281

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Distributors (In-Stock)

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DF Sales Co.

USA . 11,430 parts In-Stock

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$0.140

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DF Sales Co.

USA . 11,430 parts In-Stock

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Vyrian

USA . 1,014 parts In-Stock

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$0.220

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$0.220

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Digiode

USA . 284 parts In-Stock

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$0.237

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Bristol Electronics

USA . 2,270 parts In-Stock

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$0.300

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$0.150

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$0.060

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2,270

$0.300

$0.150

$0.060

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Component Electronics Inc.

Canada . 2,950 parts In-Stock

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$0.380

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$0.290

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$0.250

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2,950

$0.380

$0.290

$0.250

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American Microsemiconductor Inc.

USA . 1,768 parts In-Stock

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$0.490

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ComSIT Distribution GmbH

Germany . 129,000 parts In-Stock

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DigiKey Marketplace

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R&J Components

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Lighthouse Electronics, Inc.

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Sea View Technologies

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Diverse Electronics

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Resion

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Flex Direct, LLC

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Electronics Depot

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Sogenti Electronics

Canada . 3,000 parts In-Stock

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Maverick Electronics, Inc.

USA . 2,937 parts In-Stock

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Microfarads

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Manoshevitz Elec. Sales

Israel . 2,130 parts In-Stock

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Prism Electronics

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Inventory MP

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Q Components

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A2Z Electronics, Inc.

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PC Components Company LLC

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ECAB

Sweden . 652 parts In-Stock

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Semi Source

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Speed Components Ltd

Israel . 200 parts In-Stock

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Corohmni

South Africa . 73 parts In-Stock

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$0.140

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Corphita

USA . 189 parts In-Stock

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Continental Prestige Electronics

USA . 32,671 parts In-Stock

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$0.220

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Assy Fe

Spain . 27,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,814 parts In-Stock

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SupplyDigital Components

Austria . 5,678 parts In-Stock

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Kulean Microsystems

USA . 4,919 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 3,348 parts In-Stock

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Metaverse IC Inc.

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GreenTree Electronics

Israel . 2,999 parts In-Stock

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Problanco Electronics

Mexico . 2,110 parts In-Stock

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UHIMA Technologies

Türkiye . 211 parts In-Stock

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Speed Components Ltd (Excess)

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Authorized Procurement Solutions

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Overview

Unleash the power of cutting-edge technology with the MMBV105GLT1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Varactor Diodes that are perfect for applications requiring ultra high frequency capabilities. The hyperabrupt diode classification ensures optimal performance, while the small outline package makes installation a breeze. With a minimum quality factor of 250 and a nominal diode capacitance of 2.15pF, this diode offers unmatched value and benefits to customers looking for reliable and efficient solutions. Experience the difference with the MMBV105GLT1 - your gateway to innovative technology.

Feature Benefit Bullets

Minimum Quality Factor: 250

Higher quality factor indicates better performance and efficiency in signal processing applications, making this varactor diode a reliable choice.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the diode, ensuring a longer lifespan and stable performance.

Config: SINGLE

Single configuration simplifies installation and integration into electronic circuits, making it easy to use and suitable for various applications.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt diodes offer fast response times and precise control of capacitance, making them ideal for high-frequency applications requiring rapid switching.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra-high frequency operations, this varactor diode is perfect for applications such as wireless communication and radar systems.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on PCBs, saving space and enabling efficient assembly in electronic devices.

Package Shape: RECTANGULAR

Rectangular package shape offers efficient use of space and facilitates placement and alignment during circuit board assembly.

No. of Terminals: 3

Three terminals provide flexibility in connection options, allowing for versatile use in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for dense packing of components, suitable for compact electronic devices.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures reliable solder connections and compatibility with traditional soldering processes for easy integration in electronic assemblies.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and connection options, allowing for easy integration into various circuit layouts.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation rating, this varactor diode can handle elevated power levels without overheating, ensuring reliable performance under demanding conditions.

Nominal Diode Capacitance: 2.15 pF

Low nominal capacitance provides precise control over capacitance values, making this diode suitable for applications requiring fine tuning of RF circuits.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage ensures robustness and protection against voltage spikes, enhancing the reliability and durability of the diode.

Maximum Time At Peak Reflow Temperature (s): 30

Sufficient time at peak reflow temperature allows for proper soldering and mounting, ensuring secure and reliable connections during assembly processes.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance enables the diode to withstand elevated temperatures during soldering without compromising its performance or structural integrity.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers adjustable capacitance values for precise tuning of RF circuits, making it ideal for frequency modulation and signal processing applications.

Terminal Form: GULL WING

Gull wing terminal form provides easy access for soldering and connection, facilitating installation and ensuring secure electrical contacts.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage rating indicates resilience to reverse voltage conditions, safeguarding the diode against potential damage or failure.

Diode Cap Tolerance: 30.23 %

Capacitance tolerance of 30.23% ensures consistent performance and accurate capacitance values, allowing for reliable operation in precision applications.

Diode Element Material: SILICON

Silicon diode element material offers excellent electrical properties and stability, ensuring reliable performance over a wide range of operating conditions.

Minimum Diode Capacitance Ratio: 4

High minimum capacitance ratio provides a wide range of adjustable capacitance values, offering versatility and flexibility in tuning RF circuits for optimal performance.

Technical Specifications

Varactor Diodes MMBV105GLT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

30.23 %

Minimum Diode Capacitance Ratio:

4

Nominal Diode Capacitance:

2.15 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

250

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV105GLT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-414-9177, 5961014149177

NIIN

014149177

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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