Loading...

MMBV2101LT1

Onsemi

MMBV2101LT1 by Onsemi

MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.

Median Price

$0.075

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Global Solutions Electronics Company

USA . 4,843 parts In-Stock

1+ parts

$0.075

100+ parts

-

1k+ parts

-

10k+ parts

-

4,843

$0.075

-

-

-

Prism Electronics

USA . 3,659 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,659

-

-

-

-

Electronics Depot

USA . 2,879 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,879

-

-

-

-

PC Components Company LLC

USA . 2,650 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,650

-

-

-

-

Bristol Electronics

USA . 2,650 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,650

-

-

-

-

Vyrian

USA . 2,083 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,083

-

-

-

-

Diverse Electronics

Canada . 990 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

990

-

-

-

-

Digiode

USA . 867 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

867

-

-

-

-

J & M Industries LLC

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Speed Components Ltd

Israel . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 426 parts In-Stock

1+ parts

$0.075

100+ parts

-

1k+ parts

-

10k+ parts

-

426

$0.075

-

-

-

Component Stockers USA

USA . 339 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

339

$99.990

-

-

-

Problanco Electronics

Mexico . 6,859 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,859

-

-

-

-

TANS Electronics

Latvia . 5,150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,150

-

-

-

-

SupplyDigital Components

Austria . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Perfect Parts

USA . 4,098 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,098

-

-

-

-

Kulean Microsystems

USA . 3,161 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,161

-

-

-

-

Assy Fe

Spain . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Corphita

USA . 1,089 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,089

-

-

-

-

UHIMA Technologies

Türkiye . 932 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

932

-

-

-

-

Overview

Unlock the potential of high-frequency applications with the Onsemi MMBV2101LT1 Varactor Diode. Manufactured by a trusted industry leader, this diode offers a minimum quality factor of 450 and a nominal capacitance of 6.8pF, making it ideal for a wide range of uses from high frequency to ultra-high frequency bands. With its small outline package style and dual terminal position, this diode provides excellent performance and reliability. Upgrade your projects with the precision and efficiency of the MMBV2101LT1 and experience the quality and value that Onsemi has to offer.

Feature Benefit Bullets

Minimum Quality Factor: 450

High quality factor ensures excellent performance and stability in high frequency applications.

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers durability and reliability while keeping the overall product lightweight.

Config: SINGLE

Single configuration makes it easy to integrate and use in various electronic circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures fast and precise control over capacitance which is crucial in frequency tuning applications.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band allows for versatile use in a range of high frequency to ultra high frequency applications.

Surface Mount: YES

Surface mount capability facilitates easy installation and PCB layout.

Package Shape: RECTANGULAR

Rectangular shape aids in efficient placement and mounting on circuit boards.

No. of Terminals: 3

Having 3 terminals provides flexibility and options for connecting the diode in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and reliability in connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and connectivity options.

Maximum Power Dissipation: 0.225 W

High maximum power dissipation rating ensures the diode can handle power efficiently without overheating.

Nominal Diode Capacitance: 6.8 pF

Nominal capacitance value is suitable for a wide range of frequency tuning applications.

Minimum Breakdown Voltage: 30 V

Minimum breakdown voltage ensures protection against voltage spikes and overloads.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for 30 seconds, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 235

Can withstand high peak reflow temperature of 235 °C during soldering without damage.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for precise tuning and frequency control in electronic circuits.

Terminal Form: GULL WING

Gull wing terminal form is suitable for surface mount technology and provides good mechanical strength.

Maximum Repetitive Peak Reverse Voltage: 30 V

Maximum repetitive peak reverse voltage rating ensures reliable performance and protection in reverse voltage conditions.

Diode Cap Tolerance: 10 %

Diode capacitance tolerance of 10% allows for consistent performance and accuracy in tuning applications.

Diode Element Material: SILICON

Silicon diode element material offers good stability and reliability in various operating conditions.

Minimum Diode Capacitance Ratio: 2.5

Minimum diode capacitance ratio provides a wide range of capacitance values for tuning applications.

Technical Specifications

Varactor Diodes MMBV2101LT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MMBV2101LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20