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MMBV2107L

Onsemi

MMBV2107L by Onsemi

MMBV2107L by Onsemi is a varactor diode with a min quality factor of 350, nominal capacitance of 22 pF, and breakdown voltage of 30 V. It is used in RF applications for frequency tuning due to its variable capacitance property.

Median Price

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Lifecycle Status

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1k+

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Digiode

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Vyrian

USA . 1,155 parts In-Stock

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Kulean Microsystems

USA . 7,380 parts In-Stock

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SupplyDigital Components

Austria . 6,443 parts In-Stock

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Problanco Electronics

Mexico . 5,067 parts In-Stock

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TANS Electronics

Latvia . 4,626 parts In-Stock

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Corphita

USA . 1,335 parts In-Stock

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Corohmni

South Africa . 367 parts In-Stock

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UHIMA Technologies

Türkiye . 189 parts In-Stock

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Overview

Unlock a world of possibilities with the MMBV2107L Varactor Diode by Onsemi. With a minimum quality factor of 350 and a high capacitance ratio of 2.5, this diode offers superior performance and reliability. From frequency tuning in RF applications to voltage-controlled oscillators, the MMBV2107L is a versatile solution for various electronic designs. Trust in Onsemi's expertise and innovation to deliver top-notch quality and value. Upgrade your projects with the MMBV2107L and experience unmatched benefits and advantages.

Feature Benefit Bullets

Minimum Quality Factor: 350

High quality factor ensures better performance and stability in RF applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good protection and durability for the diode.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape saves space and enables compact designs.

No. of Terminals: 3

3 terminals provide flexibility in connection options.

Package Style (Meter): SMALL OUTLINE

Small outline package style is suitable for space-constrained applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish enhances solderability and reliability.

Terminal Position: DUAL

Dual terminal position allows for different mounting orientations.

Maximum Power Dissipation: 0.225 W

High maximum power dissipation rating for efficient heat dissipation.

Nominal Diode Capacitance: 22 pF

Nominal capacitance value meets common RF design requirements.

Minimum Breakdown Voltage: 30 V

High breakdown voltage ensures reliability and protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for tuning and adjustment in RF circuits.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and easy soldering.

Maximum Repetitive Peak Reverse Voltage: 30 V

High reverse voltage rating for increased reliability in reverse bias conditions.

Diode Cap Tolerance: 10 %

Capacitance tolerance of 10% ensures consistent performance in applications.

Diode Element Material: SILICON

Silicon material for diode element offers good electrical properties and reliability.

Minimum Diode Capacitance Ratio: 2.5

Minimum capacitance ratio of 2.5 provides a wide tuning range for RF applications.

Technical Specifications

Varactor Diodes MMBV2107L attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBV2107L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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