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BB150135

NXP Semiconductors

BB150135 by NXP Semiconductors

BB150135 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 30 V. Ideal for RF tuning circuits, it comes in a small outline package with dual terminals.

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1k+

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Vyrian

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Digiode

USA . 891 parts In-Stock

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Anansix

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One Stop Electronics

USA . 342 parts In-Stock

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$0.010

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Native Components

USA . 389 parts In-Stock

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$127.290

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Northwest PG Solutions

USA . 388 parts In-Stock

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$140.019

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UNI Independent Distributors

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Corphita

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Overview

Unlock exceptional performance with the BB150135 from NXP Semiconductors, a standout in varactor diode technology. Designed for very high-frequency applications, this reliable component ensures top-notch quality and durability, making it perfect for RF tuning and signal processing. With its compact surface mount design and robust temperature range, it delivers unmatched versatility and efficiency, empowering your projects with enhanced functionality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides excellent durability and protection from environmental factors, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies integration into circuits, reducing board space and complexity.

Frequency Band: VERY HIGH FREQUENCY

Designed to operate at very high frequencies, this varactor diode is suitable for RF applications, enhancing performance in communication systems.

Surface Mount: YES

Being a surface mount device allows for easy assembly and minimized footprint on PCBs, facilitating high-density designs.

Maximum Reverse Current: 0.01 uA

The low maximum reverse current ensures minimal leakage, providing enhanced efficiency and performance in circuits.

Package Shape: RECTANGULAR

The rectangular shape is optimized for space efficiency on PCB layouts, ideal for compact electronic designs.

Reverse Test Voltage: 30 V

The 30 V reverse test voltage indicates strong reliability and robustness, suitable for high-voltage environments.

No. of Terminals: 2

With only two terminals, installation is straightforward, making it easy to incorporate into various circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style provides excellent space-saving advantages, essential for modern compact electronic devices.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature enhances its reliability in demanding thermal environments.

Minimum Operating Temperature: -55 °C

The wide temperature range ensures functionality in extreme conditions, making it suitable for a variety of applications.

Terminal Position: DUAL

Dual terminal position supports versatile mounting options, enhancing installation flexibility in circuit designs.

Maximum Power Dissipation: 0.2 W

A maximum power dissipation of 0.2 W ensures the device can operate efficiently without overheating.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V ensures reliable operation in circuits that experience voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it allows for voltage-controlled capacitance, ideal for tuning applications in RF circuits.

Terminal Form: GULL WING

Gull wing terminals provide a secure solder joint, enhancing mechanical stability and reliability during operation.

Diode Element Material: SILICON

Silicon as the diode element material ensures excellent performance and stability in various operating conditions.

Minimum Diode Capacitance Ratio: 14

A minimum capacitance ratio of 14 allows for significant tuning capability, making it versatile for different frequency applications.

Technical Specifications

Varactor Diodes BB150135 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Minimum Diode Capacitance Ratio:

14

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

30 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BB150135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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