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SVC276

Onsemi

SVC276 by Onsemi

SVC276 by Onsemi is a Varactor Diode with 76.75pF capacitance, 14V breakdown voltage, and 3.1 min capacitance ratio. Commonly used in RF applications for frequency tuning due to its variable capacitance diode type and dual element configuration. Operating at max temp of 125 °C, it's surface-mountable with a small outline package style.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,998 parts In-Stock

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Vyrian

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Metaverse IC Inc.

Canada . 180,000 parts In-Stock

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Kulean Microsystems

USA . 7,489 parts In-Stock

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Problanco Electronics

Mexico . 5,120 parts In-Stock

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TANS Electronics

Latvia . 3,518 parts In-Stock

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SupplyDigital Components

Austria . 2,789 parts In-Stock

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Corphita

USA . 519 parts In-Stock

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Corohmni

South Africa . 311 parts In-Stock

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UHIMA Technologies

Türkiye . 193 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the SVC276 Varactor Diode by Onsemi. With a minimum quality factor of 100 and a nominal capacitance of 76.75 pF, this high-quality diode offers exceptional performance and reliability. Ideal for applications such as frequency tuning and voltage-controlled oscillators, the SVC276 is designed to enhance the efficiency and functionality of your circuits. Experience the superior craftsmanship and cutting-edge technology that Onsemi is known for, and elevate your projects to the next level with the SVC276 Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 100

Higher quality factor indicates better performance and stability in high frequency applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good protection and durability for the diode.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient operation and connection in circuits.

Surface Mount: YES

Surface mount capability makes it easy to integrate this diode into modern electronic designs.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and mounting on circuit boards.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connections and configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact electronic devices.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows this diode to be used in a wide range of applications.

Terminal Position: DUAL

Dual terminal position enables easy and secure connections in circuits.

Nominal Diode Capacitance: 76.75 pF

Capacitance value is suitable for various frequency tuning and filtering applications.

Minimum Breakdown Voltage: 14 V

Higher breakdown voltage ensures reliable performance and protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for adjustable capacitance for frequency tuning applications.

Terminal Form: FLAT

Flat terminal form simplifies soldering and connection processes in circuit assembly.

No. of Elements: 2

Having 2 elements provides dual functionality and options for different circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 16 V

Higher repetitive peak reverse voltage rating provides added protection against reverse voltage conditions.

Diode Cap Tolerance: 3.94 %

Low tolerance value indicates consistent performance and accuracy in capacitance values.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and stability in various operating conditions.

Minimum Diode Capacitance Ratio: 3.1

Higher minimum capacitance ratio allows for wider tuning range and flexibility in applications.

Technical Specifications

Varactor Diodes SVC276 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

14 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

3.94 %

Minimum Diode Capacitance Ratio:

3.1

Nominal Diode Capacitance:

76.75 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

100

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC276 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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