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MMBV105GLT1G

Onsemi

MMBV105GLT1G by Onsemi

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

$0.304

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 174,124 parts In-Stock

1+ parts

-

100+ parts

$0.304

1k+ parts

$0.252

10k+ parts

$0.225

174,124

-

$0.304

$0.252

$0.225

DigiKey

USA . 174,124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.380

10k+ parts

-

174,124

-

-

$0.380

-

Verical

USA . 25,031 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.281

25,031

-

-

-

$0.281

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,145 parts In-Stock

1+ parts

$0.237

100+ parts

-

1k+ parts

-

10k+ parts

-

1,145

$0.237

-

-

-

Bristol Electronics

USA . 508 parts In-Stock

1+ parts

$0.750

100+ parts

$0.300

1k+ parts

$0.210

10k+ parts

-

508

$0.750

$0.300

$0.210

-

Component Electronics Inc.

Canada . 650 parts In-Stock

1+ parts

$1.150

100+ parts

$0.870

1k+ parts

$0.750

10k+ parts

-

650

$1.150

$0.870

$0.750

-

Chip Stock

USA . 108,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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108,500

-

-

-

-

Vyrian

USA . 3,526 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,526

-

-

-

-

ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,000

-

-

-

-

North Shore Components

USA . 1,262 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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1,262

-

-

-

-

Microfarads

USA . 600 parts In-Stock

1+ parts

-

100+ parts

-

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600

-

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Lakeland Logistics Inc

USA . 127 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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127

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 497 parts In-Stock

1+ parts

$0.220

100+ parts

-

1k+ parts

-

10k+ parts

-

497

$0.220

-

-

-

Corphita

USA . 1,002 parts In-Stock

1+ parts

$0.224

100+ parts

-

1k+ parts

-

10k+ parts

-

1,002

$0.224

-

-

-

AZTECH Wire

Italy . 434 parts In-Stock

1+ parts

$14.940

100+ parts

-

1k+ parts

-

10k+ parts

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434

$14.940

-

-

-

Continental Prestige Electronics

USA . 181,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.220

10k+ parts

-

181,512

-

-

$0.220

-

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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90,000

-

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 18,289 parts In-Stock

1+ parts

-

100+ parts

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18,289

-

-

-

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Perfect Parts

USA . 10,662 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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10,662

-

-

-

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SupplyDigital Components

Austria . 8,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,010

-

-

-

-

Authorized Procurement Solutions

USA . 7,550 parts In-Stock

1+ parts

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7,550

-

-

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GreenTree Electronics

Israel . 7,550 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,550

-

-

-

-

TANS Electronics

Latvia . 7,274 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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7,274

-

-

-

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Problanco Electronics

Mexico . 6,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,860

-

-

-

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Kulean Microsystems

USA . 5,053 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,053

-

-

-

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Glotronic Ltd.

UK . 900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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900

-

-

-

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UHIMA Technologies

Türkiye . 392 parts In-Stock

1+ parts

-

100+ parts

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392

-

-

-

-

Technical Specifications

Varactor Diodes MMBV105GLT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

30.23 %

Minimum Diode Capacitance Ratio:

4

Nominal Diode Capacitance:

2.15 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

250

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV105GLT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-414-9177, 5961014149177

NIIN

014149177

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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