Loading...

1N5456A

Onsemi

1N5456A by Onsemi

1N5456A by Onsemi is a varactor diode with 175 min. quality factor, 100 pF nominal capacitance, and 30 V min. breakdown voltage. Ideal for ultra-high frequency applications due to its abrupt variable capacitance classification. Package: Glass, Config: Single, Terminals: 2.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,973 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,973

-

-

-

-

Vyrian

USA . 1,631 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,631

-

-

-

-

Anansix

USA . 994 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

994

-

-

-

-

Sunrise Surplus Inc.

USA . 42 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42

-

-

-

-

R&J Components

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Semi Source

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 7,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,690

-

-

-

-

TANS Electronics

Latvia . 7,484 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,484

-

-

-

-

Kulean Microsystems

USA . 6,317 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,317

-

-

-

-

Corphita

USA . 2,643 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,643

-

-

-

-

SupplyDigital Components

Austria . 912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

912

-

-

-

-

UHIMA Technologies

Türkiye . 791 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

791

-

-

-

-

Corohmni

South Africa . 449 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

449

-

-

-

-

Northwest PG Solutions

USA . 167 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

167

-

-

-

-

Native Components

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

Overview

Unlock the potential of your electronics with the Onsemi 1N5456A Varactor Diode. Manufactured by Onsemi, renowned for their high-quality components, this diode offers superior performance in ultra-high frequency applications. With a minimum quality factor of 175 and a breakdown voltage of 30V, this diode provides precise variable capacitance for optimal signal tuning. Its compact round package and isolated case connection make installation a breeze. Experience enhanced functionality and efficiency with the 1N5456A Varactor Diode from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 175

A high quality factor ensures minimal signal loss and high efficiency in signal processing, making this varactor diode a reliable choice for tuning and frequency control applications.

Package Body Material: GLASS

Glass offers excellent insulation properties and stability, providing protection for the diode against environmental factors and ensuring long-term reliability.

Config: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use this varactor diode effectively in various electronic applications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer sharp changes in capacitance with voltage, providing precise control over tuning and frequency modulation in electronic circuits.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra-high frequency applications, this varactor diode is suitable for high-speed communication systems and RF devices that require precise tuning capabilities.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in various electronic devices, ensuring convenience and versatility in circuit layout.

No. of Terminals: 2

With two terminals, this varactor diode is easy to connect in a circuit, enabling straightforward integration and enhancing overall efficiency in signal processing.

Package Style (Meter): LONG FORM

The long form package style provides ample space for internal components, allowing for efficient heat dissipation and ensuring stable performance under varying operating conditions.

Terminal Position: AXIAL

Axial terminal positioning enables easy insertion and soldering in circuit boards, facilitating reliable connections and streamlined assembly processes.

Case Connection: ISOLATED

Isolated case connection improves signal integrity by preventing interference from external sources, ensuring consistent performance and reliable operation in sensitive electronic applications.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4 W, this varactor diode can handle moderate power levels without overheating, making it suitable for high-frequency circuits and RF systems.

Nominal Diode Capacitance: 100 pF

The nominal capacitance value of 100 pF allows for precise tuning and frequency control in electronic circuits, enabling accurate signal modulation and filtering capabilities.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V ensures reliable performance and protection against voltage spikes, making this varactor diode suitable for applications with varying voltage requirements.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance levels for fine-tuning signal processing, making it ideal for frequency modulation and tuning in RF circuits.

Terminal Form: WIRE

Wire terminals provide secure connections and easy installation in circuit boards, enhancing reliability and simplifying maintenance tasks for electronic devices.

Diode Cap Tolerance: 10 %

With a capacitance tolerance of 10%, this varactor diode ensures consistency in performance and tuning accuracy, making it a dependable choice for precise frequency control applications.

Diode Element Material: SILICON

Silicon diode elements offer high performance and reliability in electronic circuits, providing consistent capacitance levels and efficient signal modulation capabilities.

Minimum Diode Capacitance Ratio: 2.7

A minimum capacitance ratio of 2.7 allows for flexible tuning and modulation capabilities in electronic circuits, enabling precise frequency control and signal processing.

Technical Specifications

Varactor Diodes 1N5456A attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.7

Nominal Diode Capacitance:

100 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

175

Surface Mount:

NO

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5456A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-536-1552, 5961005361552, 5961-00-426-7364, 5961004267364, 5961-14-313-1401, 5961143131401

NIIN

005361552, 004267364, 143131401

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20