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1N5446

Onsemi

1N5446 by Onsemi

1N5446 by Onsemi is a Varactor Diode with a Min Quality Factor of 350, Max Reverse Current of 0.02 uA, and Nominal Diode Capacitance of 18 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,383 parts In-Stock

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Digiode

USA . 1,014 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 499 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 20 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Native Components

USA . 58 parts In-Stock

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$5.802

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TANS Electronics

Latvia . 8,161 parts In-Stock

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SupplyDigital Components

Austria . 3,270 parts In-Stock

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Northwest PG Solutions

USA . 2,370 parts In-Stock

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Corphita

USA . 1,976 parts In-Stock

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Problanco Electronics

Mexico . 1,877 parts In-Stock

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UHIMA Technologies

Türkiye . 542 parts In-Stock

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Kulean Microsystems

USA . 354 parts In-Stock

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Corohmni

South Africa . 223 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the 1N5446 varactor diode by Onsemi. Known for their exceptional quality and reliability, Onsemi offers a wide range of applications for their varactor diodes, ensuring optimal performance in various circuit designs. The 1N5446 stands out for its high quality factor and precise variable capacitance, making it the perfect choice for frequency modulation and tuning applications. Experience the value and benefits of Onsemi's superior technology with the 1N5446 varactor diode.

Feature Benefit Bullets

Minimum Quality Factor: 350

A high quality factor indicates a highly efficient varactor diode, providing better performance and reliability in electronic applications.

Package Body Material: GLASS

Glass packaging offers good thermal stability and reliability, making the varactor diode suitable for a wide range of operating temperatures.

Config: SINGLE

Single configuration simplifies circuit design and integration, ensuring ease of use in various electronic applications.

Maximum Reverse Current: 0.02 uA

Low reverse current ensures minimal power loss and improved overall efficiency of the varactor diode in electronic circuits.

Terminal Position: AXIAL

Axial terminal position provides ease of connection and installation, making the varactor diode convenient for assembly in electronic devices.

Technical Specifications

Varactor Diodes 1N5446 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

18 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5446 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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