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MV104

Onsemi

MV104 by Onsemi

The Onsemi MV104 is a Varactor Diode with 2 elements, common cathode config, and abrupt variable capacitance classification. It has a min quality factor of 100, nominal capacitance of 39.5 pF, and breakdown voltage of 32 V. Ideal for RF applications due to its high-quality factor and precise capacitance control in communication systems.

Median Price

$9.405

Lifecycle Status

Suppliers In-Stock

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Forefront Electronics and Design

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American Microsemiconductor Inc.

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Vyrian

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Rebound Electronics

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Digiode

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ACDS - Activité Composants Distribution Service

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First Choice Components Inc.

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Connector Distribution Corp

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Right Parts Inc.

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Lakeview Electronics

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ECAB

Sweden . 72 parts In-Stock

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Sunrise Surplus Inc.

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MISTER SPROCKETS

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Prism Electronics

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LittleDiode

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Corohmni

South Africa . 191 parts In-Stock

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GreenTree Electronics

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TANS Electronics

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Kulean Microsystems

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Corphita

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Overview

Elevate your electronics with the MV104 Varactor Diode by Onsemi, a top-quality component designed for precision and performance. Manufactured by industry leader Onsemi, this diode offers exceptional value and benefits for a wide range of applications. With its high minimum quality factor, common cathode configuration, and abrupt variable capacitance classification, the MV104 delivers reliable and efficient results every time. Upgrade your projects with the MV104 Varactor Diode and experience superior quality and performance like never before.

Feature Benefit Bullets

Minimum Quality Factor: 100

Higher quality factor indicates better performance and efficiency of the varactor diode.

Package Body Material: PLASTIC/EPOXY

This material provides good physical protection and low-cost packaging for the diode.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easier circuit integration and control.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer sharp changes in capacitance making them ideal for frequency tuning applications.

Package Shape: ROUND

Round shape helps in efficient mounting and soldering of the diode.

No. of Terminals: 3

3 terminals provide versatile connectivity options in circuit design.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for easy installation and handling in various equipment.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and conductivity for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easier PCB layout and soldering.

Maximum Power Dissipation: 0.28 W

High power dissipation capability allows the diode to handle higher power levels without damage.

Nominal Diode Capacitance: 39.5 pF

The specified capacitance value ensures precise tuning and performance in RF applications.

Minimum Breakdown Voltage: 32 V

Higher breakdown voltage offers increased protection and reliability under overvoltage conditions.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance ensures stable performance during manufacturing processes.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diode type provides variable capacitance for frequency modulation and tuning purposes.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for secure mechanical mounting and good electrical connections.

No. of Elements: 2

2 elements offer dual functionality or configuration options in circuit design.

Maximum Repetitive Peak Reverse Voltage: 32 V

The specified reverse voltage rating ensures protection against reverse voltage breakdown.

Diode Cap Tolerance: 6.33 %

Capacitance tolerance indicates the precision of the diode's capacitance value for accurate circuit operation.

Diode Element Material: SILICON

Silicon material offers reliability, stability, and high performance in varactor diode applications.

Minimum Diode Capacitance Ratio: 2.5

Higher minimum capacitance ratio indicates a wider tuning range and flexibility for frequency modulation.

Technical Specifications

Varactor Diodes MV104 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

1% MATCHING GUARANTEED

Minimum Breakdown Voltage:

32 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

6.33 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

39.5 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

100

Maximum Repetitive Peak Reverse Voltage:

32 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MV104 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-075-2654, 5961010752654, 5961-25-123-9046, 5961251239046, 5961-99-256-3315, 5961992563315

NIIN

010752654, 251239046, 992563315

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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