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MC209RLRP

Onsemi

MC209RLRP by Onsemi

MC209RLRP by Onsemi is a single varactor diode with 29pF capacitance, 30V breakdown voltage, and 200 min quality factor. Ideal for very high frequency applications due to its 0.2W power dissipation and silicon element material. Package style is cylindrical with tin lead finish.

Median Price

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2

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1k+

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Vyrian

USA . 390 parts In-Stock

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Austria . 6,736 parts In-Stock

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Kulean Microsystems

USA . 6,096 parts In-Stock

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TANS Electronics

Latvia . 4,328 parts In-Stock

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Corphita

USA . 577 parts In-Stock

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UHIMA Technologies

Türkiye . 485 parts In-Stock

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Corohmni

South Africa . 473 parts In-Stock

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Mexico . 254 parts In-Stock

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Overview

Unlock the potential of your high-frequency applications with the MC209RLRP Varactor Diode by Onsemi. With a minimum quality factor of 200 and a nominal diode capacitance of 29 pF, this single-config diode offers unparalleled performance and reliability. Whether you're designing radar systems or wireless communication devices, this cylindrical package delivers the precision and stability you need. Trust in Onsemi's expertise and experience in semiconductor manufacturing to ensure top-notch quality and cutting-edge technology. Elevate your projects with the MC209RLRP Varactor Diode and experience the difference it can make in your designs.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor ensures better performance and stability in high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, suitable for various applications.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency operation, making it suitable for applications requiring fast signal processing.

Package Shape: ROUND

Round package shape allows for easy mounting and integration in circular layouts.

No. of Terminals: 3

Three terminals provide flexibility in circuit connectivity and functionality.

Package Style (Meter): CYLINDRICAL

Cylindrical package style ensures efficient heat dissipation and mechanical stability.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and electrical conductivity.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and assembly.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2W, the diode can handle moderate power levels.

Nominal Diode Capacitance: 29 pF

The nominal capacitance of 29 pF ensures efficient signal conditioning and processing.

Minimum Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, the diode offers protection against voltage surges and spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for tuning and adjustment of capacitance, ideal for applications requiring frequency agility.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides reliability in soldering and mechanical strength.

Diode Cap Tolerance: 10.34 %

The tolerance level of 10.34% ensures consistency in performance and accuracy.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and reliability.

Minimum Diode Capacitance Ratio: 5

Minimum diode capacitance ratio of 5 provides flexibility in tuning and adjustment.

Technical Specifications

Varactor Diodes MC209RLRP attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MC209RLRP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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