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BB809-AMMOPAK

NXP Semiconductors

BB809-AMMOPAK by NXP Semiconductors

BB809-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,852 parts In-Stock

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Vyrian

USA . 2,929 parts In-Stock

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Anansix

USA . 1,434 parts In-Stock

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One Stop Electronics

USA . 974 parts In-Stock

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$2.010

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$2.010

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Native Components

USA . 97 parts In-Stock

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$91.650

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$87.984

97

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$87.984

Northwest PG Solutions

USA . 958 parts In-Stock

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$100.815

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958

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Corphita

USA . 4,391 parts In-Stock

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UNI Independent Distributors

Spain . 3,741 parts In-Stock

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Overview

Unlock the potential of your designs with the BB809-AMMOPAK from NXP Semiconductors, a leader in innovative electronics. This high-quality varactor diode is engineered for optimal performance in very high-frequency applications, ensuring reliability and efficiency. Its robust glass package and isolated connections make it ideal for everything from RF circuits to tuning elements. Experience unmatched value and superior benefits, enhancing your products with precision and durability!

Feature Benefit Bullets

Package Body Material: GLASS

The glass body offers excellent thermal stability and reliability, making the diode suitable for high-frequency applications.

Configuration: SINGLE

A single configuration allows for simplicity in design and application, suitable for compact circuits.

Frequency Band: VERY HIGH FREQUENCY

Optimized for very high frequency operations, ensuring better performance in RF applications and communication systems.

Maximum Reverse Current: 0.01 uA

Low reverse current minimizes power loss and increases efficiency, ideal for high-performance circuits.

Package Shape: ROUND

The round shape provides flexibility in mounting and integration into various circuit designs.

Reverse Test Voltage: 28 V

A higher reverse test voltage ensures robustness in demanding applications, reducing the risk of device failure.

Number of Terminals: 2

With two terminals, this varactor diode simplifies connections within most circuit designs.

Package Style (Meter): LONG FORM

The long form package style can enhance the connection with the circuit, providing better stability and performance.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature allows the diode to perform well in challenging thermal environments.

Terminal Position: AXIAL

Axial terminal position is advantageous for circuit designs that require through-hole mounting, providing secure connections.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference, ensuring reliable performance in sensitive applications.

Minimum Breakdown Voltage: 30 V

High breakdown voltage contributes to device reliability, enabling safe operation in various electronic circuits.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode makes this component ideal for tunable circuits and RF applications, increasing design versatility.

Terminal Form: WIRE

Wire terminal form allows for flexible and easy integration into custom PCB layouts and designs.

Diode Element Material: SILICON

Silicon material ensures good performance at a reasonable cost, making it a reliable choice for high-frequency applications.

Minimum Diode Capacitance Ratio: 8

A minimum capacitance ratio of 8 allows for significant tuning range, enhancing the diode's applicability in various electronic circuits.

Technical Specifications

Varactor Diodes BB809-AMMOPAK attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

3% MATCHED SETS ARE AVAILABLE

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

8

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB809-AMMOPAK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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