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BBY62TRL

NXP Semiconductors

BBY62TRL by NXP Semiconductors

BBY62TRL by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 17.5 pF, a min capacitance ratio of 9.7, and comes in a compact surface mount package with 4 terminals. Ideal for tuning circuits and RF applications, it ensures efficient performance in small electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,806 parts In-Stock

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Digiode

USA . 1,945 parts In-Stock

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Vyrian

USA . 135 parts In-Stock

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135

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Native Components

USA . 191 parts In-Stock

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$0.115

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$0.110

191

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$0.110

Northwest PG Solutions

USA . 992 parts In-Stock

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$0.126

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$0.111

992

$0.126

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One Stop Electronics

USA . 1,180 parts In-Stock

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$3.010

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1,180

$3.010

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UNI Independent Distributors

Spain . 7,134 parts In-Stock

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Corphita

USA . 3,525 parts In-Stock

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Overview

Unlock the potential of your designs with the BBY62TRL varactor diode from NXP Semiconductors. Renowned for its superior quality and reliability, this compact solution excels in ultra-high frequency applications, delivering unparalleled performance. Benefit from its dual-element configuration and versatile capacitance, making it ideal for tuning circuits and RF applications. With NXP’s trusted expertise, elevate your projects while ensuring efficiency and innovation every step of the way.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to moisture, making it suitable for a variety of environmental conditions.

Config: SEPARATE, 2 ELEMENTS

The separate configuration allows for flexible circuit design, which can improve performance in specific applications.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra-high frequency applications, this diode can handle high-speed signals, making it ideal for RF and microwave applications.

Surface Mount: YES

Surface mount technology enables compact circuit designs and simplifies the assembly process, making it a good choice for modern electronics.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of PCB space and can improve thermal and electrical performance in the design.

No. of Terminals: 4

Having four terminals enhances connection reliability and allows for better integration into various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-efficient, enabling manufacturers to create more compact products without sacrificing performance.

Terminal Position: DUAL

Dual terminal positions allow for easier layout design on PCBs and flexibility in interconnections within an application.

Nominal Diode Capacitance: 17.5 pF

With a nominal capacitance of 17.5 pF, this diode offers precise capacitance control, beneficial for tuning and frequency modulation applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it is specifically designed for applications that require tunable capacitance, making it highly effective for RF circuits.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering characteristics and reliable mechanical strength in assembly processes.

No. of Elements: 2

Having two elements enhances tuning capability, making it suitable for applications that require precise frequency adjustments.

Diode Element Material: SILICON

Silicon as a material offers excellent electronic properties and thermal stability, making it ideal for a wide range of applications.

Minimum Diode Capacitance Ratio: 9.7

A high minimum diode capacitance ratio ensures better tuning range and efficiency, which is crucial for applications like radio frequency oscillators.

Technical Specifications

Varactor Diodes BBY62TRL attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

SEPARATE, 2 ELEMENTS

Minimum Diode Capacitance Ratio:

9.7

Nominal Diode Capacitance:

17.5 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G4

No. of Elements:

2

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BBY62TRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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