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1N5470

Onsemi

1N5470 by Onsemi

1N5470 by Onsemi is a Varactor Diode with a Min Quality Factor of 500, Nominal Capacitance of 33pF, and Max Reverse Current of 0.00000002uA. It is used in RF applications for frequency tuning due to its ABRUPT Variable Capacitance Diode Classification.

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Digiode

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Vyrian

USA . 1,075 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 310 parts In-Stock

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Kulean Microsystems

USA . 8,324 parts In-Stock

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Problanco Electronics

Mexico . 7,542 parts In-Stock

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TANS Electronics

Latvia . 5,473 parts In-Stock

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SupplyDigital Components

Austria . 5,443 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

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Corohmni

South Africa . 71 parts In-Stock

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UHIMA Technologies

Türkiye . 11 parts In-Stock

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Overview

Enhance your electronic projects with the 1N5470 Varactor Diode by Onsemi. With a minimum quality factor of 500 and a nominal capacitance of 33pF, this diode offers precise variable capacitance for applications requiring signal tuning and filtering. Crafted with superior quality and reliable performance, Onsemi ensures that each diode meets strict industry standards. Whether you're working on radio frequency circuits or voltage-controlled oscillators, the 1N5470 guarantees optimal results and consistent performance. Upgrade your projects today with this high-quality varactor diode from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 500

High quality factor ensures stable and reliable performance, making this varactor diode a great choice for precision tuning applications.

Package Body Material: GLASS

Glass package body provides excellent durability and resistance to environmental factors, enhancing the longevity of the diode.

Config: SINGLE

Single configuration simplifies the design and integration process, making this varactor diode easy to use in various circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures rapid changes in capacitance, ideal for frequency modulation and tuning applications.

Maximum Reverse Current: 0.00000002 uA

Extremely low reverse current minimizes power loss and increases efficiency in circuits utilizing this varactor diode.

Package Shape: ROUND

Round shape allows for easy mounting and soldering, providing convenience during installation.

Reverse Test Voltage: 25 V

High reverse test voltage capacity ensures reliability and safety in high voltage applications.

No. of Terminals: 2

Two terminals simplifies the connectivity setup, making it straightforward to integrate this varactor diode into circuit designs.

Package Style (Meter): LONG FORM

Long form package style accommodates space for optimal placement and organization in the circuit layout.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance allows for reliable performance in demanding industrial environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality in a wide range of temperature conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides excellent solderability and conductivity, enhancing the overall performance of the varactor diode.

Terminal Position: AXIAL

Axial terminal position simplifies the assembly process, making it easy to connect to other components in the circuit.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures stable operation in various circuit setups.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows for reliable operation under heavy load conditions.

Nominal Diode Capacitance: 33 pF

Nominal capacitance value provides precise tuning capabilities, making this varactor diode ideal for frequency modulation applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage rating ensures reliability and safety in high voltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type offers versatile tuning capabilities, making it suitable for a wide range of applications.

Terminal Form: WIRE

Wire terminal form provides flexibility in connection setups, making it easy to integrate this varactor diode into various circuit designs.

Maximum Repetitive Peak Reverse Voltage: 30 V

High repetitive peak reverse voltage capacity ensures durability and reliability in continuous operation.

Diode Cap Tolerance: 20 %

Cap tolerance of 20% allows for flexibility in tuning applications, accommodating a range of capacitance values.

Diode Element Material: SILICON

Silicon diode element material ensures stability and durability, enhancing the overall performance and lifespan of the varactor diode.

Minimum Diode Capacitance Ratio: 2.9

Minimum capacitance ratio provides precise tuning capabilities, making this varactor diode suitable for high-performance frequency modulation applications.

Technical Specifications

Varactor Diodes 1N5470 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

500

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5470 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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