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BB204G-TAPE-REEL

NXP Semiconductors

BB204G-TAPE-REEL by NXP Semiconductors

BB204G-TAPE-REEL by NXP Semiconductors is a variable capacitance diode ideal for RF tuning applications. It features a common cathode configuration with 2 elements, and a min capacitance ratio of 2.5. This cylindrical, through-hole component ensures reliable performance in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,283 parts In-Stock

1+ parts

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3,283

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Anansix

USA . 1,372 parts In-Stock

1+ parts

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1,372

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Vyrian

USA . 1,311 parts In-Stock

1+ parts

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1,311

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,245 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

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10k+ parts

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1,245

$2.010

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Native Components

USA . 332 parts In-Stock

1+ parts

$397.675

100+ parts

$389.721

1k+ parts

$385.745

10k+ parts

$381.768

332

$397.675

$389.721

$385.745

$381.768

Northwest PG Solutions

USA . 588 parts In-Stock

1+ parts

$437.442

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588

$437.442

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Corphita

USA . 1,161 parts In-Stock

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1,161

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UNI Independent Distributors

Spain . 827 parts In-Stock

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827

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Overview

Unlock the potential of your designs with the BB204G-TAPE-REEL from NXP Semiconductors—where innovation meets reliability! Renowned for their high-quality standards, NXP delivers superior varactor diodes that enhance tuning and frequency modulation in a variety of applications. With exceptional performance and durability, this product ensures efficient circuit design, making it the perfect choice for audio, RF, and communication devices. Elevate your projects with the trusted excellence of NXP!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and electrical insulation, making the diode reliable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies circuit design and integration with other components.

Package Shape: ROUND

The round shape is ideal for cylindrical designs and can contribute to better thermal management.

No. of Terminals: 3

Three terminals enable versatile connectivity options in circuit designs, facilitating easier integration.

Package Style (Meter): CYLINDRICAL

The cylindrical package allows for efficient space utilization and is suitable for various mounting options.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for PCB layout, ensuring stability and better contact.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it offers tunable capacitance, making it excellent for RF and tuning applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are easy to solder, enhancing reliability.

No. of Elements: 2

With two elements, this diode can achieve better functionality in modulating signal frequencies.

Diode Element Material: SILICON

Silicon is a widely used semiconductor material, known for its good electrical properties and thermal performance.

Minimum Diode Capacitance Ratio: 2.5

A capacitance ratio of 2.5 ensures effective signal modulation, making it ideal for tuning applications.

Technical Specifications

Varactor Diodes BB204G-TAPE-REEL attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Minimum Diode Capacitance Ratio:

2.5

Diode Element Material:

SILICON

JESD-30 Code:

O-PBCY-T3

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB204G-TAPE-REEL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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