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BB405B-AMMOPAK

NXP Semiconductors

BB405B-AMMOPAK by NXP Semiconductors

BB405B-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated case ensures reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,223 parts In-Stock

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Anansix

USA . 2,222 parts In-Stock

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Digiode

USA . 2,083 parts In-Stock

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One Stop Electronics

USA . 749 parts In-Stock

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$2.010

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Native Components

USA . 11 parts In-Stock

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$160.020

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$153.619

11

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$153.619

Northwest PG Solutions

USA . 1,466 parts In-Stock

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$176.022

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$176.022

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UNI Independent Distributors

Spain . 5,872 parts In-Stock

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Corphita

USA . 3,768 parts In-Stock

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Overview

Unlock unparalleled performance with the BB405B-AMMOPAK from NXP Semiconductors, a leader in innovative solutions. This premium varactor diode is designed for ultra-high frequency applications, ensuring exceptional reliability and minimal reverse current for optimal efficiency. Crafted with precision in a durable glass package, it delivers consistent results across diverse environments. Elevate your projects with this versatile component, offering unmatched value and performance that truly sets you apart!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package material provides excellent insulation and protection against environmental factors, making it suitable for prolonged use in various applications.

Config: SINGLE

The single configuration allows for simplified design and integration into circuits, making it an ideal choice for applications needing a straightforward solution.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra-high frequency band makes this diode suitable for advanced communication and radar systems requiring high performance at elevated frequencies.

Maximum Reverse Current: 0.01 uA

A very low maximum reverse current ensures minimal power loss and improved efficiency in circuits, contributing to better overall system performance.

Package Shape: ROUND

The round shape of the package can facilitate easier integration into various circuit designs and contribute to compact layouts.

Reverse Test Voltage: 28 V

The reverse test voltage capability up to 28 V adds reliability and robustness, ensuring the diode can withstand potential back EMF in applications.

No. of Terminals: 2

Having only 2 terminals simplifies connections and reduces installation complexity, which is an advantage for compact circuit designs.

Package Style (Meter): LONG FORM

The long form package style can support enhanced thermal dissipation, which is beneficial in high-performance applications.

Maximum Operating Temperature: 100 °C

A maximum operating temperature of 100 °C allows for operation in demanding thermal conditions, making this diode a good choice for high-temperature environments.

Terminal Position: AXIAL

Axial terminal positioning provides versatility in PCB layout, making it easier to configure within various types of circuit designs.

Case Connection: ISOLATED

Isolated case connections enhance safety and prevent unintended short circuits, which is crucial for maintaining integrity in sensitive electronic applications.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V improves the robustness of the diode, making it suitable for applications where high voltage spikes may occur.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this component offers versatility in tuning circuits, such as RF oscillators and voltage-controlled oscillators for precise frequency adjustments.

Terminal Form: WIRE

Wire terminal form can facilitate easier and secure connections in various circuit assemblies, accommodating different manufacturing requirements.

Diode Element Material: SILICON

Silicon as the diode element material provides great performance in terms of speed and efficiency, making it a reliable component for a wide range of electronic applications.

Minimum Diode Capacitance Ratio: 7.6

A high minimum diode capacitance ratio enables better tuning performance and greater efficiency in capacitance modulation applications, enhancing circuit dynamics.

Technical Specifications

Varactor Diodes BB405B-AMMOPAK attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

3% MATCHED SETS ARE AVAILABLE

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

7.6

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB405B-AMMOPAK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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