Loading...

MV209RLRE

Onsemi

MV209RLRE by Onsemi

MV209RLRE by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and very high frequency band. It is used in applications requiring variable capacitance diodes for tuning circuits at temperatures up to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,207 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,207

-

-

-

-

Digiode

USA . 1,991 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,991

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 4,967 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,967

-

-

-

-

TANS Electronics

Latvia . 3,878 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,878

-

-

-

-

Corphita

USA . 2,255 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,255

-

-

-

-

Kulean Microsystems

USA . 1,226 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,226

-

-

-

-

UHIMA Technologies

Türkiye . 573 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

573

-

-

-

-

Problanco Electronics

Mexico . 360 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

360

-

-

-

-

Corohmni

South Africa . 64 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

64

-

-

-

-

Overview

Unlock endless possibilities with the MV209RLRE Varactor Diode by Onsemi. With a minimum quality factor of 200 and very high frequency capabilities, this diode is perfect for applications requiring precise tuning and frequency modulation. Onsemi's reputation for quality and innovation shines through in this product, offering customers unmatched value and performance. Whether you're designing RF filters, voltage-controlled oscillators, or frequency synthesizers, the MV209RLRE provides reliable, high-quality results every time. Elevate your designs with Onsemi's Varactor Diode today!

Feature Benefit Bullets

Minimum Quality Factor: 200

A high quality factor ensures better performance and stability in high frequency applications, making this varactor diode a reliable choice for demanding circuit designs.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and mechanical protection, making the diode suitable for a wide range of environmental conditions.

Frequency Band: VERY HIGH FREQUENCY

Being designed for very high frequency applications, this varactor diode is ideal for use in advanced communication systems and radar technologies.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, ensuring reliability in harsh conditions.

Nominal Diode Capacitance: 29 pF

The specified capacitance value allows for precise tuning and control in circuit designs, making this varactor diode suitable for frequency control and modulation applications.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V ensures protection against voltage spikes and overloads, enhancing the durability and longevity of the diode.

Technical Specifications

Varactor Diodes MV209RLRE attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV209RLRE Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 18