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MV209G

Onsemi

MV209G by Onsemi

MV209G by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this cylindrical diode in plastic/epoxy package is designed for through-hole mounting with tin silver copper finish.

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Overview

Enhance your electronic projects with the MV209G Varactor Diode from Onsemi. Known for their high-quality components, Onsemi delivers reliable products that offer exceptional performance. The MV209G is perfect for applications in very high-frequency circuits, providing a variable capacitance diode classification of hyperabrupt. With a minimum quality factor of 200, this diode offers precise tuning capabilities and superior signal quality. Upgrade your designs with the MV209G and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and efficiency of the diode in high frequency applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package offers good durability and protection for the diode, making it suitable for various environments.

Config: SINGLE

Single configuration simplifies the circuit design and integration process.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt classification allows for precise and rapid changes in capacitance, making it ideal for frequency tuning applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, ensuring reliable performance in demanding frequency ranges.

Package Shape: ROUND

Round shape helps in easy integration and mounting within electronic circuits.

No. of Terminals: 2

Having 2 terminals simplifies the connection and use of the diode in electronic circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and space-saving design for the diode.

Terminal Finish: TIN SILVER COPPER

This terminal finish offers excellent conductivity and corrosion resistance for reliable performance.

Terminal Position: BOTTOM

Bottom terminal position allows for easy soldering and connection of the diode within circuits.

Maximum Power Dissipation: 0.2 W

Capable of handling up to 0.2 W power dissipation, ensuring stability and durability under varying operating conditions.

Nominal Diode Capacitance: 29 pF

Having a nominal capacitance of 29 pF makes it suitable for specific frequency tuning applications.

Minimum Breakdown Voltage: 30 V

Minimum breakdown voltage of 30 V ensures the diode can withstand high voltage spikes without getting damaged.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it offers precise control over capacitance for frequency tuning and signal processing.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy mounting and connection on circuit boards for secure placement.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30 V, it provides protection against reverse voltage breakdown.

Diode Cap Tolerance: 10.34 %

Having a capacitance tolerance of 10.34% ensures accurate and consistent performance in frequency modulation applications.

Diode Element Material: SILICON

Silicon diode element material offers reliability and stability in various operating conditions.

Minimum Diode Capacitance Ratio: 5

Having a minimum capacitance ratio of 5 allows for a wide range of capacitance adjustment for frequency tuning applications.

Technical Specifications

Varactor Diodes MV209G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-226AC

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MV209G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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