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1N5449

Onsemi

1N5449 by Onsemi

The Onsemi 1N5449 Varactor Diode has a Min Quality Factor of 350, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 27 pF. It is used in applications requiring variable capacitance diodes with abrupt classification for tuning RF circuits.

Median Price

$6.750

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 54 parts In-Stock

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Vyrian

USA . 1,996 parts In-Stock

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Digiode

USA . 408 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 20 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Native Components

USA . 174 parts In-Stock

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Northwest PG Solutions

USA . 1,348 parts In-Stock

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Corohmni

South Africa . 171 parts In-Stock

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Kulean Microsystems

USA . 5,710 parts In-Stock

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SupplyDigital Components

Austria . 4,805 parts In-Stock

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Problanco Electronics

Mexico . 3,699 parts In-Stock

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TANS Electronics

Latvia . 2,301 parts In-Stock

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Corphita

USA . 2,170 parts In-Stock

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UHIMA Technologies

Türkiye . 327 parts In-Stock

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the 1N5449 Varactor Diode by Onsemi. Crafted with precision and quality in mind, this diode offers a minimum quality factor of 350 and a variable capacitance ratio of 2.6, ensuring top-notch performance in all applications. Whether you're working on RF amplifiers, frequency modulators, or voltage-controlled oscillators, this diode provides the stability and efficiency you need. Trust in Onsemi's reputation for excellence and discover the value and advantages that the 1N5449 brings to your projects.

Feature Benefit Bullets

Minimum Quality Factor: 350

Higher quality factor indicates better performance and efficiency.

Package Body Material: GLASS

Glass material ensures durability and stability for the diode.

Config: SINGLE

Single configuration simplifies the circuit design and integration process.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification allows for precise control and switching capability.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and increased efficiency.

Package Shape: ROUND

Round shape provides uniform distribution of stresses and ease of mounting.

Reverse Test Voltage: 25 V

Higher reverse test voltage ensures robustness and reliability.

No. of Terminals: 2

Two terminals simplify the connection and usage of the diode.

Terminal Finish: TIN LEAD

Tin lead finish enhances solderability and conductivity.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for versatile application in various environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Maximum Power Dissipation: 0.4 W

Higher power dissipation capability indicates better thermal management and reliability.

Nominal Diode Capacitance: 27 pF

Nominal capacitance value ensures optimal performance in capacitance-sensitive applications.

Minimum Breakdown Voltage: 30 V

Higher minimum breakdown voltage indicates improved voltage handling capacity.

Diode Element Material: SILICON

Silicon material enhances efficiency and stability of the diode.

Minimum Diode Capacitance Ratio: 2.6

Higher diode capacitance ratio provides better control and tuning capability.

Technical Specifications

Varactor Diodes 1N5449 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

27 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5449 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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