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1N4793

Onsemi

1N4793 by Onsemi

1N4793 by Onsemi is a varactor diode with 27pF nominal capacitance, abrupt variable capacitance classification, and 15 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.005uA and max operating temperature of 150 °C.

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1k+

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Vyrian

USA . 1,775 parts In-Stock

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Digiode

USA . 878 parts In-Stock

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878

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Native Components

USA . 144 parts In-Stock

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$477.445

100+ parts

$467.896

1k+ parts

$463.122

10k+ parts

$458.347

144

$477.445

$467.896

$463.122

$458.347

Northwest PG Solutions

USA . 1,998 parts In-Stock

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$525.190

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Problanco Electronics

Mexico . 6,469 parts In-Stock

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SupplyDigital Components

Austria . 6,444 parts In-Stock

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TANS Electronics

Latvia . 4,438 parts In-Stock

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Kulean Microsystems

USA . 3,925 parts In-Stock

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Corphita

USA . 1,764 parts In-Stock

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UHIMA Technologies

Türkiye . 195 parts In-Stock

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Corohmni

South Africa . 87 parts In-Stock

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Overview

Unlock the power of precision with the 1N4793 Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge technology in every product they create. The 1N4793 is perfect for applications where variable capacitance diodes are needed, offering a wide range of benefits such as high performance, durability, and consistency. Improve your electronic designs with the unmatched value and advantages that the 1N4793 brings to the table, setting you apart from the competition.

Feature Benefit Bullets

Minimum Quality Factor: 15

A higher quality factor indicates better performance and efficiency of the varactor diode in circuit applications.

Package Body Material: GLASS

Glass packaging provides better protection against environmental factors and ensures durability of the diode.

Config: SINGLE

Single configuration simplifies circuit design and makes installation easier.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification indicates precise and quick capacitance changes, making it suitable for frequency tuning applications.

Maximum Reverse Current: 0.005 uA

Low reverse current ensures minimal power loss and improves efficiency of the diode.

Package Shape: ROUND

Round shape allows for easy integration into various circuit designs and layouts.

Reverse Test Voltage: 20 V

Suitable reverse test voltage ensures reliable and stable performance in diverse operating conditions.

No. of Terminals: 2

Simplified 2-terminal design contributes to ease of installation and connection in circuit applications.

Package Style (Meter): LONG FORM

Long-form package style provides ample space for internal components and facilitates heat dissipation for improved performance.

Maximum Operating Temperature: 150 °C

Higher maximum operating temperature allows for versatile use in different temperature environments without compromising performance.

Minimum Operating Temperature: -65 °C

Wide operating temperature range ensures functionality in extreme cold conditions, making it suitable for diverse applications.

Terminal Finish: TIN LEAD

Tin lead finish enhances solderability and ensures reliable electrical connections for long-term durability.

Terminal Position: AXIAL

Axial terminal position facilitates easy setup and connection in circuit designs.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures stable performance in various circuit configurations.

Maximum Power Dissipation: 0.5 W

Higher power dissipation capability allows for reliable operation under demanding conditions.

Nominal Diode Capacitance: 27 pF

Optimal capacitance value for effective frequency tuning and circuit performance.

Minimum Breakdown Voltage: 22 V

Higher minimum breakdown voltage provides better protection against voltage surges and ensures longevity of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode design offers flexibility for frequency modulation and tuning applications.

Terminal Form: WIRE

Wire terminal form allows for easy connection and secure attachment in circuit setups.

Maximum Repetitive Peak Reverse Voltage: 20 V

Optimal maximum reverse voltage rating ensures stable performance under varying reverse voltage conditions.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% provides consistent performance and accuracy in frequency tuning applications.

Diode Element Material: SILICON

Silicon material offers reliability, durability, and consistent performance in various circuit applications.

Minimum Diode Capacitance Ratio: 2.35

Higher minimum capacitance ratio provides better control and tuning capabilities for frequency modulation applications.

Technical Specifications

Varactor Diodes 1N4793 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

22 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.35

Nominal Diode Capacitance:

27 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4793 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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