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1N4789

Onsemi

1N4789 by Onsemi

1N4789 by Onsemi is a varactor diode with max reverse current of 0.005 uA and nominal capacitance of 12 pF. It has a breakdown voltage of 28 V, making it ideal for RF tuning applications in temperature range -65 to 150 °C.

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Native Components

USA . 650 parts In-Stock

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Northwest PG Solutions

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TANS Electronics

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Problanco Electronics

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Corphita

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SupplyDigital Components

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Kulean Microsystems

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Overview

Unlock the full potential of your electronic devices with the 1N4789 Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by industry professionals worldwide. The 1N4789 is ideal for applications requiring variable capacitance diodes with a high-quality factor, ensuring optimal performance. With a wide operating temperature range and low reverse current, this diode offers exceptional value and benefits to customers looking for top-notch components. Upgrade your designs with the 1N4789 Varactor Diode and experience the difference that Onsemi brings to the table.

Feature Benefit Bullets

Minimum Quality Factor: 15

A higher quality factor indicates better performance and efficiency in signal processing applications.

Package Body Material: GLASS

Glass packages provide better protection and durability for the varactor diode, ensuring longer lifespan and reliability.

Config: SINGLE

Single configuration simplifies circuit design and integration of the varactor diode into various electronics setups.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer fast and precise capacitance tuning, ideal for applications requiring quick adjustments.

Maximum Reverse Current: 0.005 uA

Low reverse current minimizes power loss and improves overall efficiency of the varactor diode.

Package Shape: ROUND

Round shape facilitates easier mounting and installation of the varactor diode in electronic circuits.

Reverse Test Voltage: 25 V

High reverse test voltage ensures reliable operation and protection against voltage surges or spikes.

No. of Terminals: 2

Having 2 terminals simplifies circuit connections and reduces complexity in circuitry design.

Package Style (Meter): LONG FORM

Long form package style provides more surface area for heat dissipation, improving overall thermal management of the varactor diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the varactor diode to function reliably in a wide range of environments and applications.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the varactor diode can operate in extreme cold conditions without performance degradation.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity for reliable connections in electronic circuits.

Terminal Position: AXIAL

Axial terminal position offers easy alignment and connection of the varactor diode in linear circuits.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation and protection against interference, enhancing the reliability of the varactor diode.

Maximum Power Dissipation: 0.5 W

High maximum power dissipation capability allows the varactor diode to handle higher power loads without overheating or damage.

Nominal Diode Capacitance: 12 pF

Having a nominal capacitance of 12 pF offers flexibility in capacitance tuning for various frequency applications.

Minimum Breakdown Voltage: 28 V

Higher minimum breakdown voltage protects the varactor diode from voltage spikes and ensures long-term reliability in high voltage environments.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for precise tuning of capacitance in electronic circuits for optimal performance.

Terminal Form: WIRE

Wire terminal form enables easy connection and secure attachment of the varactor diode in circuit assemblies.

Maximum Repetitive Peak Reverse Voltage: 25 V

High maximum repetitive peak reverse voltage ensures the varactor diode can withstand voltage fluctuations without damage.

Diode Cap Tolerance: 20 %

Having a 20% tolerance for diode capacitance allows for flexibility in tuning and adjustment in various electronic applications.

Diode Element Material: SILICON

Silicon material in the diode element provides good performance and reliability, making it suitable for a wide range of applications.

Minimum Diode Capacitance Ratio: 2.35

A higher minimum capacitance ratio of 2.35 provides more range for capacitance tuning and adjustment in electronic circuits.

Technical Specifications

Varactor Diodes 1N4789 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

28 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.35

Nominal Diode Capacitance:

12 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

25 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4789 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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