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1N5701

Onsemi

1N5701 by Onsemi

1N5701 by Onsemi is a varactor diode with 375 min quality factor, 18 pF nominal capacitance, and -65 to 175 °C operating temp. It's used in RF applications for voltage-controlled oscillators due to its abrupt variable capacitance classification.

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Austria . 6,885 parts In-Stock

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Kulean Microsystems

USA . 6,884 parts In-Stock

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TANS Electronics

Latvia . 6,882 parts In-Stock

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Northwest PG Solutions

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Corphita

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UHIMA Technologies

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Overview

Discover the power of the 1N5701 Varactor Diode by Onsemi, a high-quality component that promises reliability and top-notch performance. With Onsemi's reputation for excellence in semiconductor manufacturing, this diode offers unparalleled value to customers across various applications. From RF tuning to frequency modulation, this diode delivers precise control and efficiency, making it an essential choice for professionals seeking superior quality in their electronic projects. Elevate your designs with the 1N5701 Varactor Diode and experience the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Minimum Quality Factor: 375

With a high minimum quality factor, this varactor diode ensures excellent performance and efficiency in RF applications.

Package Body Material: GLASS

The use of glass as the package body material provides durability and protection to the internal components of the diode.

Config: SINGLE

The single configuration simplifies the circuit design and integration of this varactor diode.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification indicates fast response and high sensitivity, making this diode ideal for tuning applications.

Maximum Reverse Current: 0.00000002 uA

The extremely low maximum reverse current ensures minimal power losses and improved overall efficiency.

Package Shape: ROUND

The round package shape offers easy installation and compatibility with standard mounting options.

Reverse Test Voltage: 60 V

The 60V reverse test voltage provides ample protection and reliability in reverse bias conditions.

No. of Terminals: 2

Having 2 terminals simplifies the connection and enables easy integration into various circuit designs.

Package Style (Meter): LONG FORM

The long form package style offers versatility in mounting options and compatibility with different equipment configurations.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures reliable performance even in demanding thermal conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range allows this varactor diode to be used in a wide range of environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and ensures secure connections in the circuit.

Terminal Position: AXIAL

The axial terminal position simplifies the mounting process and ensures proper alignment in the circuit.

Case Connection: ISOLATED

The isolated case connection enhances safety and ensures proper electrical insulation in the circuit.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4W, this varactor diode can handle high power levels without overheating.

Nominal Diode Capacitance: 18 pF

The nominal capacitance of 18pF ensures precise tuning capability and stable performance in RF circuits.

Minimum Breakdown Voltage: 65 V

The high minimum breakdown voltage of 65V ensures reliable operation and protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers tunable capacitance for frequency tuning applications.

Terminal Form: WIRE

The wire terminal form allows for easy and secure connection in a circuit, improving overall reliability.

Maximum Repetitive Peak Reverse Voltage: 60 V

The 60V maximum repetitive peak reverse voltage ensures protection against reverse voltage stress in the circuit.

Diode Cap Tolerance: 20 %

The 20% tolerance in diode capacitance allows for flexibility in tuning applications and compensates for variations.

Diode Element Material: SILICON

The silicon diode element material offers high efficiency and reliability in various applications.

Minimum Diode Capacitance Ratio: 2.8

The minimum capacitance ratio of 2.8 ensures a wide tuning range and flexibility in frequency modulation.

Technical Specifications

Varactor Diodes 1N5701 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.8

Nominal Diode Capacitance:

18 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

375

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5701 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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