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SVC364

Onsemi

SVC364 by Onsemi

The Onsemi SVC364 is a varactor diode with 2 elements, common cathode config, and 52 pF nominal capacitance. It has a min breakdown voltage of 16 V and is ideal for RF applications requiring variable capacitance diodes in small outline packages.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,487 parts In-Stock

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Vyrian

USA . 716 parts In-Stock

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Problanco Electronics

Mexico . 5,715 parts In-Stock

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SupplyDigital Components

Austria . 5,300 parts In-Stock

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Kulean Microsystems

USA . 5,021 parts In-Stock

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TANS Electronics

Latvia . 4,779 parts In-Stock

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Corphita

USA . 1,528 parts In-Stock

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UHIMA Technologies

Türkiye . 582 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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Overview

Enhance your electronic designs with the SVC364 Varactor Diode by Onsemi. With a minimum Quality Factor of 200, this high-quality component offers superior performance and reliability. Ideal for applications requiring variable capacitance, this diode features a unique configuration of 2 banks, common cathode, and 2 elements. The compact package shape and surface mount capability make it easy to integrate into your projects. Trust Onsemi's reputation for excellence in semiconductor manufacturing and unlock the value and benefits that the SVC364 brings to your designs.

Feature Benefit Bullets

Minimum Quality Factor: 200

High minimum quality factor ensures efficient performance and stable operation of the varactor diode.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight and durable.

Config: 2 BANKS, COMMON CATHODE, 2 ELEMENTS

The configuration of 2 banks with common cathode and 2 elements provides versatility and flexibility in circuit design.

Surface Mount: YES

Being surface mount compatible makes it easier to integrate the diode into various electronic applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space and easy placement on circuit boards.

No. of Terminals: 6

Having 6 terminals enables the diode to be connected securely and reliably in the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact electronic devices.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and ensures stable performance.

Nominal Diode Capacitance: 52 pF

The nominal capacitance value of 52 pF provides the necessary capacitance for effective voltage tuning.

Minimum Breakdown Voltage: 16 V

A minimum breakdown voltage of 16 V ensures the diode can handle high voltage applications with reliability.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for voltage-controlled capacitance, making it suitable for tuning applications.

Terminal Form: GULL WING

The gull wing terminal form provides a secure connection and ease of soldering during assembly.

No. of Elements: 2

Having 2 elements allows for independent control and tuning of each element in the diode.

Maximum Repetitive Peak Reverse Voltage: 16 V

With a maximum repetitive peak reverse voltage of 16 V, the diode can handle reverse voltage spikes effectively.

Diode Cap Tolerance: 7.76 %

The diode capacitance tolerance of 7.76% ensures consistent performance and accuracy in capacitance values.

Diode Element Material: SILICON

The use of silicon as the diode element material provides stability and reliability in performance.

Minimum Diode Capacitance Ratio: 17.5

A minimum diode capacitance ratio of 17.5 allows for a wide range of capacitance values for voltage tuning applications.

Technical Specifications

Varactor Diodes SVC364 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

2 BANKS, COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

7.76 %

Minimum Diode Capacitance Ratio:

17.5

Nominal Diode Capacitance:

52 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC364 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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