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1N5702

Onsemi

1N5702 by Onsemi

1N5702 by Onsemi is a varactor diode with 375 min quality factor, 22 pF nominal capacitance, and 65 V breakdown voltage. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

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Northwest PG Solutions

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Kulean Microsystems

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Problanco Electronics

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Overview

Enhance your electronic devices with the high-quality 1N5702 Varactor Diode from Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch performance and reliability. This diode is perfect for applications that require precise tuning and frequency control. Experience the benefits of its variable capacitance and low reverse current, ensuring optimal functionality. Upgrade your projects today with the 1N5702 and discover the difference in performance and efficiency it brings to your designs.

Feature Benefit Bullets

Minimum Quality Factor: 375

Higher quality factor ensures better performance and stability in high-frequency applications, making this varactor diode a reliable choice.

Package Body Material: GLASS

Glass package provides durability and protection against environmental factors, making this varactor diode suitable for various operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different electronic systems.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer precise and fast changes in capacitance, making them ideal for frequency tuning applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and improved efficiency in the circuit, making this varactor diode energy-efficient.

Package Shape: ROUND

Round package shape provides easy installation and soldering, making this varactor diode user-friendly for assembly.

Reverse Test Voltage: 60 V

High reverse test voltage capability ensures reliable performance and protection against reverse voltage spikes, making this varactor diode durable in harsh conditions.

No. of Terminals: 2

Two terminals simplify the connection process and reduce complexity in circuit design, making this varactor diode convenient for integration.

Package Style (Meter): LONG FORM

Long form package style provides additional insulation and protection, making this varactor diode suitable for high-voltage applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows this varactor diode to withstand elevated temperatures without compromising performance or reliability.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures this varactor diode can be used in cold environments without sacrificing functionality or efficiency.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability, making this varactor diode easy to install and maintain.

Terminal Position: AXIAL

Axial terminal position simplifies the integration process and ensures proper alignment in the circuit, making this varactor diode reliable and easy to use.

Case Connection: ISOLATED

Isolated case connection provides additional safety and protection against electrical interference, making this varactor diode suitable for sensitive applications.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation rating allows this varactor diode to handle high power levels without overheating, ensuring long-term reliability and performance.

Nominal Diode Capacitance: 22 pF

Nominal capacitance value is suitable for various tuning applications, making this varactor diode versatile and adaptable to different circuit requirements.

Minimum Breakdown Voltage: 65 V

High minimum breakdown voltage ensures this varactor diode can handle voltage surges without damage, making it a reliable choice for robust circuits.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for precise control of capacitance, making this varactor diode ideal for frequency modulation and tuning applications.

Terminal Form: WIRE

Wire terminal form provides flexibility in installation and connection, making this varactor diode adaptable to different circuit layouts and designs.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage allows this varactor diode to withstand voltage fluctuations without breakdown, ensuring stability and reliability in the circuit.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% provides consistency in performance and tuning accuracy, making this varactor diode a reliable choice for precise frequency control.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability, making this varactor diode suitable for demanding applications requiring stable and consistent capacitance.

Minimum Diode Capacitance Ratio: 3.2

Minimum capacitance ratio of 3.2 ensures wide tuning range and flexibility in frequency modulation, making this varactor diode versatile and adaptable to different circuit requirements.

Technical Specifications

Varactor Diodes 1N5702 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

375

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5702 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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