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1N5707

Onsemi

1N5707 by Onsemi

1N5707 by Onsemi is a varactor diode with a min quality factor of 225, max reverse current of 0.00000002 uA, and nominal capacitance of 56 pF. It is used in applications requiring variable capacitance diodes for tuning circuits due to its abrupt classification and breakdown voltage of 65 V.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,477 parts In-Stock

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Digiode

USA . 1,868 parts In-Stock

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Native Components

USA . 777 parts In-Stock

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$0.825

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Northwest PG Solutions

USA . 1,945 parts In-Stock

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$0.907

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Kulean Microsystems

USA . 5,229 parts In-Stock

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Problanco Electronics

Mexico . 5,202 parts In-Stock

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Corphita

USA . 2,456 parts In-Stock

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SupplyDigital Components

Austria . 1,909 parts In-Stock

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TANS Electronics

Latvia . 832 parts In-Stock

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UHIMA Technologies

Türkiye . 510 parts In-Stock

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Corohmni

South Africa . 346 parts In-Stock

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Overview

Enhance your electronic projects with the 1N5707 Varactor Diode from Onsemi. Known for their high-quality components, Onsemi delivers reliable products that meet stringent standards. The 1N5707 is perfect for applications requiring variable capacitance, offering precise control and exceptional performance. With a wide operating temperature range and low power dissipation, this diode ensures efficiency and longevity. Trust Onsemi to provide you with the tools you need to bring your designs to life.

Feature Benefit Bullets

Minimum Quality Factor: 225

The high minimum quality factor ensures stable and reliable performance in high frequency applications.

Package Body Material: GLASS

The glass package body material provides durability and protection for the varactor diode.

Config: SINGLE

The single configuration simplifies the circuit design and integration process.

Variable Capacitance Diode Classification: ABRUPT

The abrupt variable capacitance diode classification allows for precise tuning and control of capacitance.

Maximum Reverse Current: 0.00000002 uA

The extremely low maximum reverse current ensures minimal power consumption and high efficiency.

Reverse Test Voltage: 60 V

The 60V reverse test voltage provides a safe operating range for the varactor diode.

No. of Terminals: 2

Having 2 terminals simplifies the connection and installation process.

Package Shape: ROUND

The round package shape allows for easy mounting and integration in various circuit designs.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature range ensures the varactor diode can withstand harsh environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range ensures the varactor diode can function in cold environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good conductivity and solderability for easy installation.

Technical Specifications

Varactor Diodes 1N5707 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

56 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

225

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5707 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-333-7308, 5961013337308

NIIN

013337308

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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