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1N5701

International Semiconductor

1N5701 by International Semiconductor

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,743 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 6,885 parts In-Stock

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Kulean Microsystems

USA . 6,884 parts In-Stock

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TANS Electronics

Latvia . 6,882 parts In-Stock

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Northwest PG Solutions

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Corphita

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UHIMA Technologies

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Problanco Electronics

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Native Components

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Corohmni

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Technical Specifications

Varactor Diodes 1N5701 attributes and parameters. Explore more Varactor Diodes devices from International Semiconductor

Specs

Additional Features:

HIGH VOLTAGE

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

18 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

375

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

1N5701 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

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