Loading...

1N4794

Onsemi

1N4794 by Onsemi

1N4794 by Onsemi is a varactor diode with 33pF nominal capacitance, abrupt variable capacitance classification, and 15 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.005uA and high breakdown voltage of 22V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,270 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,270

-

-

-

-

Vyrian

USA . 1,320 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,320

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 611 parts In-Stock

1+ parts

$25.040

100+ parts

-

1k+ parts

-

10k+ parts

-

611

$25.040

-

-

-

Northwest PG Solutions

USA . 799 parts In-Stock

1+ parts

$27.544

100+ parts

$24.790

1k+ parts

-

10k+ parts

-

799

$27.544

$24.790

-

-

Problanco Electronics

Mexico . 7,309 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,309

-

-

-

-

TANS Electronics

Latvia . 5,656 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,656

-

-

-

-

Kulean Microsystems

USA . 5,031 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,031

-

-

-

-

SupplyDigital Components

Austria . 1,229 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,229

-

-

-

-

Corphita

USA . 835 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

835

-

-

-

-

UHIMA Technologies

Türkiye . 606 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

606

-

-

-

-

Corohmni

South Africa . 357 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

357

-

-

-

-

Overview

Discover the 1N4794 by Onsemi, a top-notch varactor diode designed for high-quality performance in various applications. With Onsemi's reputation for excellence and innovation in the electronics industry, you can trust that this product is built to deliver reliable results. Ideal for tuning circuits, filters, and voltage-controlled oscillators, this diode offers customers exceptional value with its precise capacitance control and low reverse current. Upgrade your projects with the 1N4794 and experience the benefits of superior quality and advanced technology.

Feature Benefit Bullets

Minimum Quality Factor: 15

Having a minimum quality factor of 15 indicates that this Varactor Diode offers good performance and efficiency in signal processing applications.

Package Body Material: GLASS

The use of glass as the package body material provides durability and stability to the diode, making it suitable for various environmental conditions.

Config: SINGLE

The single configuration simplifies the design and integration of the Varactor Diode into electronic circuits, making it user-friendly.

Maximum Reverse Current: 0.005uA

With a low maximum reverse current of 0.005uA, this diode offers excellent performance in signal modulation and detection applications.

Package Shape: ROUND

The round package shape provides easy handling and mounting of the diode, making it convenient for circuit assembly and maintenance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the diode to withstand elevated thermal conditions, ensuring reliable performance.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65 °C makes this diode suitable for use in cold environments or applications.

Case Connection: ISOLATED

The isolated case connection helps in reducing interference and noise in the circuit, ensuring accurate signal processing.

Nominal Diode Capacitance: 33pF

The nominal diode capacitance of 33pF indicates the ability of this Varactor Diode to store and release charge efficiently in electronic circuits.

Minimum Breakdown Voltage: 22 V

The minimum breakdown voltage of 22V ensures the diode's reliability and protection against voltage spikes or overloads.

Technical Specifications

Varactor Diodes 1N4794 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

22 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.35

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4794 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20