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MV2109G

Onsemi

MV2109G by Onsemi

MV2109G by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

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Overview

Looking for high-quality varactor diodes for your high-frequency to ultra high-frequency applications? Look no further than the MV2109G by Onsemi. With a minimum quality factor of 200 and a nominal diode capacitance of 33 pF, this single-configured variable capacitance diode offers precise tuning capabilities for your circuits. Manufactured by Onsemi, a trusted name in the industry, the MV2109G guarantees reliability and performance. Experience the benefits of smooth operation and excellent value with the MV2109G - your go-to choice for all your varactor diode needs.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high quality factor indicates low loss and high efficiency, making this varactor diode ideal for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, ensuring reliability in various operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easy to use in various electronic applications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes provide precise and rapid response in tuning applications, offering high performance in frequency modulation or voltage-controlled oscillators.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Covering a broad frequency range, this varactor diode is versatile and suitable for use in high frequency and ultra high frequency circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and integration in circuit boards, optimizing space utilization.

No. of Terminals: 2

Having two terminals simplifies the connection process and ensures proper circuit functionality.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers mechanical stability and ease of handling, facilitating installation in electronic devices.

Terminal Finish: TIN SILVER COPPER

The triple terminal finish provides excellent conductivity, corrosion resistance, and solderability, enhancing the overall performance and longevity of the varactor diode.

Terminal Position: BOTTOM

Bottom terminal placement allows for efficient heat dissipation and optimal signal transmission, contributing to the reliability and performance of the varactor diode.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation, this varactor diode can handle high power levels without compromising performance or reliability.

Nominal Diode Capacitance: 33 pF

The specified capacitance of 33 pF ensures accurate tuning and frequency control in various applications, enhancing signal processing capabilities.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V provides protection against voltage surges, ensuring the longevity and reliability of the varactor diode.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this varactor diode can withstand the soldering process and maintain its structural integrity during assembly.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers tunable capacitance levels, making it suitable for frequency tuning, modulation, and other voltage-controlled applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the PCB mounting process and ensures secure connections for stable operation in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

Having a maximum repetitive peak reverse voltage of 30V ensures protection against reverse voltage conditions, enhancing the reliability of the varactor diode in various applications.

Diode Cap Tolerance: 10 %

The 10% capacitance tolerance allows for variability in capacitance levels, providing flexibility in circuit design and tuning applications.

Diode Element Material: SILICON

Silicon diode element material offers high stability, low leakage currents, and excellent performance characteristics, making it a reliable choice for various electronic applications.

Minimum Diode Capacitance Ratio: 2.5

The minimum capacitance ratio of 2.5 ensures a wide range of tunable capacitance values, allowing for precise frequency control and modulation capabilities in electronic circuits.

Technical Specifications

Varactor Diodes MV2109G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MV2109G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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