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SVC371

Onsemi

SVC371 by Onsemi

The Onsemi SVC371 is a Varactor Diode with 500 pF capacitance, 16 V breakdown voltage, and 200 min quality factor. It is used in RF applications for frequency tuning due to its variable capacitance diode type and high-quality factor. The diode's small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,299 parts In-Stock

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Vyrian

USA . 1,115 parts In-Stock

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Problanco Electronics

Mexico . 8,358 parts In-Stock

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SupplyDigital Components

Austria . 7,835 parts In-Stock

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TANS Electronics

Latvia . 4,797 parts In-Stock

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Kulean Microsystems

USA . 4,259 parts In-Stock

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UHIMA Technologies

Türkiye . 702 parts In-Stock

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Corphita

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Corohmni

South Africa . 126 parts In-Stock

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Overview

Unlock a world of endless possibilities with the SVC371 Varactor Diode by Onsemi. Crafted with precision and expertise, this diode offers a minimum quality factor of 200 and a nominal capacitance of 500 pF, ensuring superior performance in a compact, small outline package. Ideal for applications such as frequency synthesizers, phase-locked loops, and voltage-controlled oscillators, the SVC371 guarantees stability and reliability. Elevate your projects to new heights with Onsemi's trusted quality and cutting-edge technology.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high minimum quality factor ensures optimal performance and reliability in applications requiring precise voltage control.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the varactor diodes, making them suitable for a wide range of environments.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards, saving time and space in electronic designs.

Nominal Diode Capacitance: 500 pF

The nominal capacitance of 500 pF ensures precise and consistent capacitance values for voltage tuning applications.

Minimum Breakdown Voltage: 16 V

Having a minimum breakdown voltage of 16 V ensures protection against voltage spikes and electrical disturbances, enhancing the reliability of the diodes.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers tunable capacitance properties, making it ideal for frequency modulation, voltage-controlled oscillators, and other variable capacitance applications.

Diode Cap Tolerance: 8 %

The 8% capacitance tolerance ensures consistent and accurate performance in voltage tuning applications, allowing for precise frequency control.

Minimum Diode Capacitance Ratio: 18.5

The high minimum diode capacitance ratio of 18.5 provides a wide range of capacitance values for voltage tuning, enabling flexibility in circuit design.

Technical Specifications

Varactor Diodes SVC371 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMPLEX

Diode Cap Tolerance:

8 %

Minimum Diode Capacitance Ratio:

18.5

Nominal Diode Capacitance:

500 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G8

No. of Elements:

5

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC371 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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