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BB909B-TAPE-REEL

NXP Semiconductors

BB909B-TAPE-REEL by NXP Semiconductors

BB909B-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated axial terminals ensure reliable performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,116 parts In-Stock

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Anansix

USA . 2,082 parts In-Stock

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Vyrian

USA . 768 parts In-Stock

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Native Components

USA . 860 parts In-Stock

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$0.111

860

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Northwest PG Solutions

USA . 1,891 parts In-Stock

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$0.127

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One Stop Electronics

USA . 1,322 parts In-Stock

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$1.010

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UNI Independent Distributors

Spain . 5,934 parts In-Stock

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Corphita

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Overview

Elevate your designs with the BB909B-TAPE-REEL from NXP Semiconductors, a premium varactor diode that ensures exceptional performance in very high-frequency applications. Renowned for their commitment to quality, NXP delivers precision-engineered components that enhance circuit efficiency and reliability. With superior temperature endurance and minimal reverse current, this diode offers unmatched value, empowering engineers to create innovative solutions across telecommunications, RF design, and more.

Feature Benefit Bullets

Package Body Material: GLASS

The glass body material provides excellent insulation and thermal stability, making this varactor diode suitable for high-frequency applications.

Config: SINGLE

A single configuration simplifies circuit design and integration, allowing for easier implementation in various applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high-frequency operation, this diode is ideal for RF and microwave applications, ensuring reliable performance in demanding environments.

Maximum Reverse Current: 0.01 uA

With a very low maximum reverse current, this diode minimizes leakage and improves circuit efficiency, making it a reliable choice for sensitive applications.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into various circuits, providing flexibility in design.

Reverse Test Voltage: 28 V

A reverse test voltage of 28 V ensures that the diode can withstand significant reverse bias, enhancing reliability in various operating conditions.

No. of Terminals: 2

With only two terminals, this varactor diode simplifies connections, making it easier to integrate into a range of electronic circuits.

Package Style (Meter): LONG FORM

The long form package style can facilitate a better fit in space-constrained applications while maintaining performance.

Maximum Operating Temperature: 100 °C

A high maximum operating temperature of 100 °C ensures the diode can perform reliably in challenging thermal environments.

Terminal Position: AXIAL

Axial terminal positioning allows for straightforward PCB layout and soldering, facilitating efficient assembly.

Case Connection: ISOLATED

Isolated case connection improves safety and prevents undesired interference in the circuit, enhancing overall performance.

Minimum Breakdown Voltage: 32 V

A minimum breakdown voltage of 32 V provides robust protection against voltage spikes, ensuring durability and reliability.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it allows for tunable capacitance, making it ideal for applications in RF tuning and frequency modulation.

Terminal Form: WIRE

The wire terminal form enables easy connection to circuits and enhances mechanical stability during operation.

Diode Element Material: SILICON

Silicon as the diode element material offers good thermal conductivity and electrical performance, ensuring efficiency.

Minimum Diode Capacitance Ratio: 12

A minimum capacitance ratio of 12 allows for greater tuning range, making this diode versatile for various applications.

Technical Specifications

Varactor Diodes BB909B-TAPE-REEL attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

2.5% MATCHED SETS ARE AVAILABLE

Minimum Breakdown Voltage:

32 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

12

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB909B-TAPE-REEL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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