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MV2101

Onsemi

MV2101 by Onsemi

MV2101 by Onsemi is a single varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this through-hole diode offers precise tuning capabilities in cylindrical package style.

Median Price

$9.690

Lifecycle Status

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American Microsemiconductor Inc.

USA . 1,473 parts In-Stock

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Tech-Mark Corp

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Digiode

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Zilex Electronics Inc.

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MISTER SPROCKETS

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Global Solutions Electronics Company

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Sea View Technologies

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Bristol Electronics

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Prism Electronics

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First Choice Components Inc.

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Semi Source

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Electronic Expediters

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PC Components Company LLC

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Sunrise Surplus Inc.

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Sinequanon

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ACDS - Activité Composants Distribution Service

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Corohmni

South Africa . 172 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Problanco Electronics

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UHIMA Technologies

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Cyclops Electronics Ltd (Excess)

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Overview

Unlock the potential of high-frequency to ultra-high-frequency applications with the MV2101 Varactor Diode by Onsemi. With a minimum quality factor of 450 and a nominal diode capacitance of 6.8 pF, this diode offers precise tuning capabilities for your RF circuits. Manufactured by Onsemi, known for their top-notch quality and reliability, the MV2101 provides customers with a cost-effective solution that delivers consistent performance. Whether you're designing wireless communication systems or radar applications, this diode's abrupt variable capacitance classification and maximum power dissipation of 0.28 W make it the ideal choice for your next project. Experience the value and benefits of the MV2101 Varactor Diode and take your designs to the next level.

Feature Benefit Bullets

Minimum Quality Factor: 450

A high minimum quality factor ensures good performance and stability in high frequency applications, making this varactor diode a reliable choice.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the varactor diode, making it suitable for various environmental conditions.

Config: SINGLE

Single configuration simplifies the circuit design and installation process, making this varactor diode easy to use for engineers and technicians.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification of the variable capacitance diode allows for precise control and modulation of capacitance, making it ideal for high frequency to ultra high frequency applications.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

With a frequency band covering high frequency to ultra high frequency, this varactor diode is versatile and can be used in a wide range of applications.

Package Shape: ROUND

The round package shape ensures efficient heat dissipation and compact design, making this varactor diode suitable for space-constrained installations.

No. of Terminals: 2

Having only 2 terminals simplifies the wiring and connections, reducing the risk of errors during installation and maintenance.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides mechanical stability and ease of handling, making this varactor diode convenient for both manual and automated assembly processes.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good conductivity and solderability, enhancing the overall performance and reliability of this varactor diode.

Maximum Power Dissipation: 0.28 W

With a maximum power dissipation of 0.28 W, this varactor diode can handle high power levels without overheating or degradation, ensuring long-term operation.

Nominal Diode Capacitance: 6.8 pF

The nominal diode capacitance of 6.8 pF allows for precise tuning and control of capacitance, making this varactor diode suitable for applications requiring fine adjustments.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V provides adequate protection against voltage spikes and surges, ensuring the longevity and reliability of this varactor diode.

Peak Reflow Temperature °C: 235

The peak reflow temperature of 235 °C allows for reliable soldering and reflow processes, making this varactor diode easy to integrate into circuit boards and assemblies.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers flexibility in tuning and adjusting capacitance, making it versatile for various frequency modulation and control applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides strong mechanical support and ease of soldering, ensuring secure connections and long-term reliability in circuit designs.

Maximum Repetitive Peak Reverse Voltage: 30 V

The maximum repetitive peak reverse voltage of 30 V offers protection against reverse voltage conditions, ensuring the safety and durability of this varactor diode.

Diode Cap Tolerance: 10 %

With a diode cap tolerance of 10%, this varactor diode provides precise and consistent capacitance values, enabling accurate frequency control and modulation.

Diode Element Material: SILICON

Made of silicon, the diode element material offers high reliability and stable performance, making this varactor diode a durable and long-lasting component for electronic circuits.

Minimum Diode Capacitance Ratio: 2.5

The minimum diode capacitance ratio of 2.5 allows for a wide range of capacitance adjustments, offering flexibility and versatility in various tuning and modulation applications.

Technical Specifications

Varactor Diodes MV2101 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MV2101 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-434-3024, 5961004343024

NIIN

004343024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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