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MV2111

Onsemi

MV2111 by Onsemi

The Onsemi MV2111 is a single varactor diode with a nominal capacitance of 47pF and min breakdown voltage of 30V. It operates at temperatures up to 150 °C, making it suitable for RF tuning applications in various electronic devices. With a quality factor of 150, this through-hole diode offers precise variable capacitance control.

Median Price

$0.398

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,979 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

$0.318

10k+ parts

$0.283

3,979

-

$0.383

$0.318

$0.283

DigiKey

USA . 3,979 parts In-Stock

1+ parts

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100+ parts

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$0.480

10k+ parts

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3,979

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$0.480

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Verical

USA . 3,979 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.398

10k+ parts

$0.354

3,979

-

-

$0.398

$0.354

Distributors (In-Stock)

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Vyrian

USA . 927 parts In-Stock

1+ parts

$0.261

100+ parts

-

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927

$0.261

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Digiode

USA . 2,098 parts In-Stock

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$0.298

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2,098

$0.298

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DigiKey Marketplace

USA . 4,000 parts In-Stock

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4,000

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Electronic Expediters

USA . 18 parts In-Stock

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Sunrise Surplus Inc.

USA . 10 parts In-Stock

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10

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Distributors (Availability)

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Corohmni

South Africa . 463 parts In-Stock

1+ parts

$0.261

100+ parts

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463

$0.261

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Corphita

USA . 1,281 parts In-Stock

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$0.283

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$0.283

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QUARKTWIN TECHNOLOGY LTD

USA . 20,126 parts In-Stock

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Problanco Electronics

Mexico . 5,752 parts In-Stock

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SupplyDigital Components

Austria . 4,665 parts In-Stock

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Kepictronics

USA . 4,500 parts In-Stock

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4,500

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Continental Prestige Electronics

USA . 4,000 parts In-Stock

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$0.278

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4,000

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$0.278

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Kulean Microsystems

USA . 3,265 parts In-Stock

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TANS Electronics

Latvia . 1,968 parts In-Stock

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Emar International I/E

Canada . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 693 parts In-Stock

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Perfect Parts

USA . 15 parts In-Stock

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Overview

Unlock endless possibilities with the MV2111 Varactor Diode by Onsemi. With a minimum quality factor of 150, this diode offers superior performance and reliability. Its variable capacitance design allows for precise tuning in a wide range of applications. Whether you're designing RF filters, oscillators, or frequency multipliers, the MV2111 delivers exceptional value and unmatched benefits. Trust in Onsemi's reputation for quality and innovation to take your projects to the next level.

Feature Benefit Bullets

Minimum Quality Factor: 150

Higher quality factor indicates better performance and stability in high-frequency applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the varactor diode.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Package Shape: ROUND

Round shape allows for easy mounting and alignment in different circuit layouts.

No. of Terminals: 2

Having only 2 terminals simplifies connection and installation process.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is commonly used and can fit in various circuit setups.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand heat during operation.

Terminal Finish: TIN LEAD

Tin-lead terminal finish ensures good conductivity and solderability.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and connection.

Maximum Power Dissipation: 0.28 W

Higher power dissipation capability ensures the diode can handle power efficiently.

Nominal Diode Capacitance: 47 pF

The specified capacitance value determines the range of frequencies the diode can operate in.

Minimum Breakdown Voltage: 30 V

Having a minimum breakdown voltage of 30 V ensures reliable performance under high voltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diodes are designed for tuning and frequency adjustment applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides mechanical strength and stability for the diode.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum peak reverse voltage of 30 V, the diode can handle reverse voltage stress.

Diode Cap Tolerance: 10 %

Capacitance tolerance of 10% ensures consistent performance and accuracy in circuit design.

Diode Element Material: SILICON

Silicon material ensures good electrical performance and stability for the diode.

Minimum Diode Capacitance Ratio: 2.5

Having a minimum capacitance ratio of 2.5 allows for a wider range of frequency tuning capabilities.

Technical Specifications

Varactor Diodes MV2111 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

47 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

150

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2111 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-436-1478, 5961004361478

NIIN

004361478

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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