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BB171X

NXP Semiconductors

BB171X by NXP Semiconductors

BB171X by NXP Semiconductors is a single-config varactor diode with an abrupt variable capacitance classification. It operates in the very high frequency band and has a max reverse current of 0.01 uA. This diode is commonly used in applications requiring small outline packages and high operating temperatures up to 125 °C.

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5

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1k+

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Digiode

USA . 4,498 parts In-Stock

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Vyrian

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Anansix

USA . 2,681 parts In-Stock

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Greenchips

USA . 1,859 parts In-Stock

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VNN

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Ampacity Inc.

Singapore . 1,185 parts In-Stock

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$0.010

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Continental Prestige Electronics

USA . 5,781 parts In-Stock

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Argo Parts USA

USA . 4,462 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Corohmni

South Africa . 1,154 parts In-Stock

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Aztec Data Supply Inc.

USA . 126 parts In-Stock

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Semicontronic

India . 1,180 parts In-Stock

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One Stop Electronics

USA . 537 parts In-Stock

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AZTECH Wire

Italy . 472 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Perfect Parts

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UNI Independent Distributors

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Microchip USA

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Corphita

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Overview

Discover the powerful BB171X by NXP Semiconductors, a Varactor Diode that brings unrivaled quality and innovation. Manufactured by NXP Semiconductors, a renowned leader in the industry, this diode offers exceptional performance and reliability. Ideal for applications requiring very high frequency, its variable capacitance classification guarantees precise control. With its small outline package shape, surface mount capability, and dual terminal position, it is versatile and convenient to use. Experience the benefits of this product's wide operating temperature range, low reverse current, and high breakdown voltage. Trust NXP Semiconductors to deliver the highest quality semiconductor solutions, and unlock endless possibilities with the BB171X.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection to the varactor diode, making it suitable for various applications.

Config: SINGLE

The single configuration of the varactor diode simplifies its integration into circuits and allows for efficient signal modulation.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification of the varactor diode ensures precise and rapid changes in the capacitance, enabling accurate frequency tuning in electronic devices.

Frequency Band: VERY HIGH FREQUENCY

With a very high frequency band, this varactor diode is ideal for applications that require precise frequency control in the radio frequency and microwave ranges.

Surface Mount: YES

The surface mount capability of this varactor diode allows for easy and secure mounting on printed circuit boards, facilitating the manufacturing process.

Maximum Reverse Current: 0.01 uA

With a maximum reverse current of only 0.01 uA, this varactor diode exhibits low leakage and power consumption, enhancing the efficiency and reliability of electronic systems.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design for the varactor diode, optimizing space utilization in electronic devices and allowing for easy integration.

Reverse Test Voltage: 30 V

With a reverse test voltage of 30 V, this varactor diode offers robustness and protection against reverse voltage conditions, ensuring its longevity and stability.

No. of Terminals: 2

The two terminals of this varactor diode simplify its integration into circuits, making it suitable for various applications where simplicity and ease of use are important.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this varactor diode allows for space-saving integration in electronic systems while maintaining high performance and reliability.

Maximum Operating Temperature: 125 °C

The varactor diode's maximum operating temperature of 125 °C ensures its suitability for use in demanding environments where temperature fluctuations may occur.

Technical Specifications

Varactor Diodes BB171X attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

32 V

Config:

SINGLE

Diode Cap Tolerance:

8.77 %

Minimum Diode Capacitance Ratio:

20.6

Nominal Diode Capacitance:

57 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

IEC-60134

Maximum Repetitive Peak Reverse Voltage:

32 V

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

30 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

BB171X Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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