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BB172X

NXP Semiconductors

BB172X by NXP Semiconductors

BB172X by NXP Semiconductors is a single, surface-mount varactor diode ideal for very high frequency applications. It features a nominal capacitance of 38.5 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 32 V. Perfect for tuning circuits and RF applications.

Median Price

$0.287

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

$0.145

100+ parts

$0.136

1k+ parts

$0.123

10k+ parts

-

3,000

$0.145

$0.136

$0.123

-

Mouser Electronics

USA . 5,775 parts In-Stock

1+ parts

$0.570

100+ parts

$0.300

1k+ parts

$0.204

10k+ parts

$0.135

5,775

$0.570

$0.300

$0.204

$0.135

Arrow

USA . 6,000 parts In-Stock

1+ parts

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6,000

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Future Electronics

Canada . 3,000 parts In-Stock

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$0.122

3,000

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$0.122

Chip1Stop

Japan . 1,853 parts In-Stock

1+ parts

-

100+ parts

$0.287

1k+ parts

$0.191

10k+ parts

$0.122

1,853

-

$0.287

$0.191

$0.122

Verical

USA . 1,853 parts In-Stock

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$0.287

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1,853

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$0.287

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Farnell

UK . 720 parts In-Stock

1+ parts

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100+ parts

$0.198

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$0.110

10k+ parts

$0.099

720

-

$0.198

$0.110

$0.099

Element14

Singapore . 720 parts In-Stock

1+ parts

-

100+ parts

$0.361

1k+ parts

$0.201

10k+ parts

$0.180

720

-

$0.361

$0.201

$0.180

Distributors (In-Stock)

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Vyrian

USA . 4,386 parts In-Stock

1+ parts

$0.127

100+ parts

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4,386

$0.127

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Digiode

USA . 1,083 parts In-Stock

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$0.138

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1,083

$0.138

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Anansix

USA . 1,120 parts In-Stock

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Corphita

USA . 2,064 parts In-Stock

1+ parts

$0.130

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2,064

$0.130

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Native Components

USA . 565 parts In-Stock

1+ parts

$9.997

100+ parts

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565

$9.997

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Northwest PG Solutions

USA . 574 parts In-Stock

1+ parts

$10.996

100+ parts

$9.897

1k+ parts

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574

$10.996

$9.897

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QUARKTWIN TECHNOLOGY LTD

USA . 19,229 parts In-Stock

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Continental Prestige Electronics

USA . 8,485 parts In-Stock

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$0.207

1k+ parts

$0.097

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8,485

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$0.207

$0.097

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UNI Independent Distributors

Spain . 5,419 parts In-Stock

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5,419

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Perfect Parts

USA . 130 parts In-Stock

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130

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Overview

Elevate your designs with the BB172X varactor diode from NXP Semiconductors, a trusted leader in innovative semiconductor solutions. This compact, high-frequency component offers unparalleled reliability and efficiency, perfect for RF applications like tuners and oscillators. With its robust performance at extreme temperatures and minimal reverse current, the BB172X ensures seamless operation, empowering you to achieve optimal functionality in your projects. Choose quality; choose NXP.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material ensures durability, resistance to moisture, and overall reliability in various operating environments.

Config: SINGLE

A single configuration simplifies the design and integration process into circuits, making it suitable for compact applications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification indicates sharp capacitance changes with voltage, making it highly effective for tuning and frequency modulation applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency, this diode is ideal for RF applications, ensuring optimal performance in wireless communication systems.

Surface Mount: YES

Surface mount technology allows for smaller designs, faster assembly, and reduced circuit board space consumption.

Maximum Reverse Current: 0.01 uA

A low maximum reverse current enhances performance and reduces power consumption significantly in various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout design on PCBs, optimizing space and connectivity with other components.

Reverse Test Voltage: 30 V

A high reverse test voltage capability ensures robustness and reliability in harsh electrical environments.

No. of Terminals: 2

Having only two terminals simplifies the connection and integration of the diode into various circuits.

Package Style (Meter): SMALL OUTLINE

A small outline package minimizes space usage on the PCB while maintaining a high level of functional performance.

Maximum Operating Temperature: 125 °C

The capability to operate at high temperatures makes this diode suitable for demanding environments without compromising performance.

Minimum Operating Temperature: -55 °C

Operating effectively at low temperatures ensures reliability in extreme conditions, making it versatile for various applications.

Terminal Position: DUAL

Dual terminal positioning facilitates flexible circuit board design and easier mounting options.

Nominal Diode Capacitance: 38.5 pF

This nominal capacitance value is suitable for various RF applications, enabling precise capacitance tuning in circuits.

Minimum Breakdown Voltage: 32 V

A high minimum breakdown voltage ensures dependable operation and reduces the risk of failure in high-voltage applications.

Peak Reflow Temperature: 260 °C

A high peak reflow temperature tolerance allows for compatibility with lead-free soldering processes, widening its usability in modern electronics.

Reference Standard: IEC-60134

Adherence to IEC-60134 ensures that this diode meets international standards for quality and reliability.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it is specifically designed for applications that require tunable capacitance, making it ideal for frequency modulation circuits.

Terminal Form: GULL WING

The gull wing terminal form ensures improved soldering reliability and ease of handling during assembly.

Maximum Repetitive Peak Reverse Voltage: 32 V

This maximum repetitive voltage rating contributes to the diode's resilience, making it suitable for repetitive applications in RF circuits.

Diode Cap Tolerance: 10%

A 10% capacitance tolerance provides a good balance between performance and production yield, making manufacturing more efficient.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical properties and thermal stability, enhancing reliability in diverse applications.

Minimum Diode Capacitance Ratio: 13.5

A minimum capacitance ratio of 13.5 indicates significant tunability, allowing for wide application in circuits that require variable capacitance.

Technical Specifications

Varactor Diodes BB172X attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

32 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

13.5

Nominal Diode Capacitance:

38.5 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

IEC-60134

Maximum Repetitive Peak Reverse Voltage:

32 V

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

30 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

BB172X Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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