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1N4808

Onsemi

1N4808 by Onsemi

1N4808 by Onsemi is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.000000005 uA, and Nominal Diode Capacitance of 27 pF. It is used in applications requiring variable capacitance diodes for tuning circuits with a max operating temperature of 150 °C.

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Lifecycle Status

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1k+

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Digiode

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Electronic Expediters

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PC Components Company LLC

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Bristol Electronics

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Native Components

USA . 994 parts In-Stock

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Northwest PG Solutions

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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Corphita

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UHIMA Technologies

Türkiye . 364 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the 1N4808 Varactor Diode from Onsemi. Known for their top-notch quality and cutting-edge technology, Onsemi delivers superior performance and reliability in every product they create. With applications ranging from frequency tuning to voltage-controlled oscillators, this diode offers unparalleled value and benefits to customers looking to optimize their circuit designs. Experience the difference with Onsemi's Varactor Diodes and take your projects to the next level.

Feature Benefit Bullets

Minimum Quality Factor: 15

A higher quality factor indicates better performance and efficiency, making this varactor diode a reliable choice for applications requiring high frequency tuning and stability.

Package Body Material: GLASS

Glass packaging offers excellent protection and insulation, ensuring the varactor diode's reliability and longevity in various operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making this varactor diode easy to use and suitable for a wide range of applications.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification allows for precise and quick capacitance changes, making this varactor diode ideal for frequency modulation and signal processing applications.

Maximum Reverse Current: 0.000000005 uA

Low reverse current ensures minimal power loss and improved efficiency in circuit operations, making this varactor diode energy-efficient.

Package Shape: ROUND

Round package shape facilitates easy handling and mounting, providing flexibility in circuit layout and assembly.

Reverse Test Voltage: 65 V

The high reverse test voltage rating ensures reliable and safe operation, making this varactor diode suitable for high voltage applications.

No. of Terminals: 2

With two terminals, this varactor diode offers simple connections and compatibility with standard circuit designs, making it a versatile choice for various electronic applications.

Package Style (Meter): LONG FORM

Long-form packaging provides ample space for labeling and identification, enhancing ease of handling and inventory management for this varactor diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures stable performance in elevated temperature environments, making this varactor diode reliable in harsh conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures consistent performance in cold environments, ensuring reliable operation across a wide temperature range.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides excellent solderability and conductivity, making this varactor diode easy to integrate into circuit assemblies for reliable connections.

Terminal Position: AXIAL

Axial terminal position simplifies mounting and connection, offering ease of installation and compatibility with standard electronic components.

Case Connection: ISOLATED

Isolated case connection ensures electrical insulation and protection, preventing short circuits and interference, making this varactor diode safe and reliable in operation.

Maximum Power Dissipation: 0.5 W

With high power dissipation capability, this varactor diode can handle power fluctuations and peak loads, ensuring reliable performance in demanding applications.

Nominal Diode Capacitance: 27 pF

The nominal capacitance value indicates the diode's tuning range and frequency response, making this varactor diode suitable for various tuning and modulation applications.

Minimum Breakdown Voltage: 72 V

The high minimum breakdown voltage provides protection against voltage spikes and surges, ensuring the reliability and durability of this varactor diode in high voltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

The variable capacitance type allows for adjustable capacitance values, making this varactor diode versatile and suitable for frequency tuning and modulation applications.

Terminal Form: WIRE

Wire terminal form offers flexibility in connection options and easy integration into circuit assemblies, ensuring reliable electrical connections for this varactor diode.

Maximum Repetitive Peak Reverse Voltage: 65 V

High maximum repetitive peak reverse voltage rating ensures protection against reverse voltage spikes, making this varactor diode reliable and durable in high voltage conditions.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for flexibility in capacitance adjustments and tuning, making this varactor diode suitable for precise frequency modulation and signal processing.

Diode Element Material: SILICON

Silicon diode element material offers excellent stability and performance, ensuring reliable operation and durability for this varactor diode in various applications.

Minimum Diode Capacitance Ratio: 2.35

The minimum capacitance ratio indicates the diode's tunability and range, making this varactor diode suitable for precise frequency tuning and modulation applications requiring variable capacitance ratios.

Technical Specifications

Varactor Diodes 1N4808 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

72 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.35

Nominal Diode Capacitance:

27 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

65 V

Maximum Reverse Current:

.000000005 uA

Reverse Test Voltage:

65 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4808 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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