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1SV228(TPH3,F)

Toshiba

1SV228(TPH3,F) by Toshiba

The Toshiba 1SV228(TPH3,F) Varactor Diode features a common cathode configuration with 2 elements, suitable for very high frequency applications. With a max operating temperature of 125°C, it offers a nominal capacitance of 30.5 pF and a min breakdown voltage of 15V, making it ideal for small outline surface mount designs.

Median Price

$0.220

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Overview

Discover the innovative 1SV228(TPH3,F) Varactor Diode by Toshiba, a high-quality product that offers exceptional performance in very high-frequency applications. Manufactured with precision and expertise, this diode features a common cathode configuration with two elements, providing precise variable capacitance for your electronic designs. With a small outline package and gull wing terminals, this diode is versatile and easy to integrate into your projects. Trust Toshiba's reputation for excellence and elevate your circuits with the value and benefits of the 1SV228(TPH3,F) Varactor Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the varactor diode, making it suitable for various environments and applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy circuit design and integration, providing flexibility in usage.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer quick and precise voltage-controlled capacitance changes, making them ideal for applications requiring rapid response.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high-frequency applications, this varactor diode ensures efficient performance in demanding RF circuits.

Surface Mount: YES

Surface mount capability simplifies PCB assembly and allows for efficient use of space in compact electronic devices.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy handling and mounting, contributing to overall ease of installation and maintenance.

No. of Terminals: 3

With 3 terminals, this varactor diode enables versatile connection options in circuit layouts.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers a compact form factor, saving valuable board space and enabling integration in space-constrained designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this varactor diode can withstand elevated thermal conditions, ensuring reliable performance in harsh environments.

Terminal Position: DUAL

Dual terminal position provides flexibility in mounting and connectivity, allowing for easy integration into various circuit configurations.

Nominal Diode Capacitance: 30.5 pF

The specified nominal capacitance value indicates the range of capacitance that can be achieved, offering precise control for voltage-variable applications.

Minimum Breakdown Voltage: 15 V

With a minimum breakdown voltage of 15V, this varactor diode ensures reliable operation under high voltage conditions, adding to the overall durability of the component.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this component allows for voltage-controlled capacitance modulation, making it suitable for frequency-tuning and filtering applications.

Terminal Form: GULL WING

Gull wing terminal form facilitates secure soldering and robust connections, enhancing the mechanical strength and reliability of the varactor diode.

No. of Elements: 2

Having 2 elements provides additional control and flexibility in voltage-dependent capacitance modulation, enabling precise tuning in RF circuits.

Diode Cap Tolerance: 6.56 %

The specified capacitance tolerance ensures accurate and consistent performance, allowing for reliable operation in frequency-dependent applications.

Diode Element Material: SILICON

Silicon material for diode elements offers stable and repeatable capacitance characteristics, ensuring long-term reliability and performance consistency.

Minimum Diode Capacitance Ratio: 2.1

The minimum capacitance ratio indicates the level of capacitance modulation achievable, enabling precise tuning and adjustment in frequency-sensitive circuits.

Technical Specifications

Varactor Diodes 1SV228(TPH3,F) attributes and parameters. Explore more Varactor Diodes devices from Toshiba

Specs

Minimum Breakdown Voltage:

15 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

6.56 %

Minimum Diode Capacitance Ratio:

2.1

Nominal Diode Capacitance:

30.5 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1SV228(TPH3,F) Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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